Monolayer graphene exhibits many spectacular electronic properties, with superconductivity being arguably the most notable exception. It was theoretically proposed that superconductivity might be induced by enhancing the electron-phonon coupling through the decoration of graphene with an alkali adatom superlattice [Profeta G, Calandra M, Mauri F (2012) Nat Phys 8(2):131-134]. Although experiments have shown an adatom-induced enhancement of the electron-phonon coupling, superconductivity has never been observed. Using angle-resolved photoemission spectroscopy (ARPES), we show that lithium deposited on graphene at low temperature strongly modifies the phonon density of states, leading to an enhancement of the electron-phonon coupling of up to λ ≃ 0.58. On part of the graphene-derived π*-band Fermi surface, we then observe the opening of a Δ ≃ 0.9-meV temperature-dependent pairing gap. This result suggests for the first time, to our knowledge, that Li-decorated monolayer graphene is indeed superconducting, with T c ≃ 5.9 K.graphene | superconductivity | ARPES

We study Na2IrO3 by angle-resolved photoemission spectroscopy, optics, and band structure calculations in the local-density approximation (LDA). The weak dispersion of the Ir 5d-t(2g) manifold highlights the importance of structural distortions and spin-orbit (SO) coupling in driving the system closer to a Mott transition. We detect an insulating gap Δ(gap)≃340  meV which, at variance with a Slater-type description, is already open at 300 K and does not show significant temperature dependence even across T(N)≃15  K. An LDA analysis with the inclusion of SO and Coulomb repulsion U reveals that, while the prodromes of an underlying insulating state are already found in LDA+SO, the correct gap magnitude can only be reproduced by LDA+SO+U, with U=3  eV. This establishes Na2IrO3 as a novel type of Mott-like correlated insulator in which Coulomb and relativistic effects have to be treated on an equal footing.

The electronic structure of Bi(2)Se(3) is studied by angle-resolved photoemission and density functional theory. We show that the instability of the surface electronic properties, observed even in ultrahigh-vacuum conditions, can be overcome via in situ potassium deposition. In addition to accurately setting the carrier concentration, new Rashba-like spin-polarized states are induced, with a tunable, reversible, and highly stable spin splitting. Ab initio slab calculations reveal that these Rashba states are derived from 5-quintuple-layer quantum-well states. While the K-induced potential gradient enhances the spin splitting, this may be present on pristine surfaces due to the symmetry breaking of the vacuum-solid interface.

Spin-orbit coupling has been conjectured to play a key role in the low-energy electronic structure of Sr 2 RuO 4 . By using circularly polarized light combined with spin-and angle-resolved photoemission spectroscopy, we directly measure the value of the effective spin-orbit coupling to be 130 AE 30 meV. This is even larger than theoretically predicted and comparable to the energy splitting of the d xy and d xz;yz orbitals around the Fermi surface, resulting in a strongly momentum-dependent entanglement of spin and orbital character in the electronic wavefunction. As demonstrated by the spin expectation value h ⃗ s k · ⃗ s −k i calculated for a pair of electrons with zero total momentum, the classification of the Cooper pairs in terms of pure singlets or triplets fundamentally breaks down, necessitating a description of the unconventional superconducting state of Sr 2 RuO 4 in terms of these newly found spin-orbital entangled eigenstates. DOI: 10.1103/PhysRevLett.112.127002 PACS numbers: 74.25.Jb, 74.20.Rp, 74.70.Pq, 79.60.-i After a flurry of experimental activity [1-5], Sr 2 RuO 4 has become a hallmark candidate for spin-triplet chiral p-wave superconductivity, the electronic analogue of superfluid 3 He [6][7][8]. However, despite the apparent existence of such a pairing, some later experiments [9-11] do not fully support this conclusion, as they cannot be explained within a theoretical model using spin-triplet superconductivity alone [12]. A resolution might come from the inclusion of spin-orbit (SO) coupling, which has been conjectured to play a key role in the normal-state electronic structure [13] and may be important when describing superconductivity as well. By mixing the canonical spin eigenstates, the relativistic SO interaction might play a fundamental role beyond simply lifting the degeneracy of competing pairing states [13][14][15][16][17].Thus far, the experimental study of SO coupling's effects on the electronic structure of Sr 2 RuO 4 has been limited to the comparison of band calculations against angle-resolved photoemission spectroscopy (ARPES) [13,[18][19][20][21] -no success has been obtained in observing experimentally either the strength of SO coupling or its implications for the mixing between spin and orbital descriptions. Here we probe this directly by performing spin-resolved ARPES [22], with circularly polarized light: by using the angular momentum inherent in each photon-along with electricdipole selection rules [23]-to generate spin-polarized photoemission from the SO mixed states. Combined with a novel spin-and orbitally-resolved ab initio based tightbinding (TB) modeling of the electronic structure [24], these results demonstrate the presence of a nontrivial spinorbital entanglement over much of the Fermi surface, i.e., with no simple way of factoring the band states into the spatial and spin sectors. Most importantly, the analysis of the corresponding Cooper pair spin eigenstates establishes the need for a description of the unconventional superconductivity of Sr 2 RuO 4 beyond...

Epitaxial gadolinium nitride films with well-oriented crystallites of up to 30 nm have been grown on yttria-stabilized ziconia substrates using a plasma-assisted pulsed laser deposition technique. We observe that the epitaxial GdN growth proceeds on top of a gadolinium oxide buffer layer that forms via reaction between deposited Gd and mobile oxygen from the substrate. Hall effect measurements show the films are electron doped to degeneracy, with carrier concentrations of 4×1020 cm−3. Magnetic measurements establish a TC of 70 K with a coercive field that can be tuned from 200 Oe to as low as 10 Oe.

One of the pivotal questions in the physics of high-temperature superconductors is whether the low-energy dynamics of the charge carriers is mediated by bosons with a characteristic timescale. This issue has remained elusive as electronic correlations are expected to greatly accelerate the electron-boson scattering processes, confining them to the very femtosecond timescale that is hard to access even with state-of-the-art ultrafast techniques. Here we simultaneously push the time resolution and frequency range of transient reflectivity measurements up to an unprecedented level, enabling us to directly observe the ∼16 fs build-up of the e ective electron-boson interaction in hole-doped copper oxides. This extremely fast timescale is in agreement with numerical calculations based on the t-J model and the repulsive Hubbard model, in which the relaxation of the photo-excited charges is achieved via inelastic scattering with short-range antiferromagnetic excitations.A fter almost 30 years of intensive experimental and theoretical efforts to understand the origin of high-temperature superconductivity in copper oxides, a consensus about the microscopic process responsible for the superconducting pairing is still lacking. The large Coulomb repulsion U 1 eV between two electrons occupying the same lattice site is believed to have fundamental consequences for the normal state of these systems 1 , and it is not clear whether a BCS-like bosonic glue that mediates the electron interactions and eventually leads to pairing can still be defined [2][3][4] . The fundamental issue can be reduced to the question whether the electronic interactions are essentially unmediated and instantaneous, or whether the low-energy physics, including superconductivity, can be effectively described in terms of interactions among the fermionic charge carriers mediated by the exchange of bosons. The problem can be rationalized by considering the Hubbard model, in which the instantaneous virtual hopping of holes into already occupied sites (with an energy cost of U ) inherently favours an antiferromagnetic (AF) coupling J = 4t 2 h /U between neighbouring sites, where t h is the nearestneighbour hopping energy. As a consequence, antiferromagnetic fluctuations with a high-energy cutoff of 2J U naturally emerge as a candidate 5 for mediating the low-energy electronic interactions, on a characteristic retarded timescale of the order ofh/2J .In principle, time-resolved optical spectroscopy 6 may be used to prove the existence of an effective retarded boson-mediated interaction, provided that the temporal resolution is of the order of the inverse bosonic-fluctuation scale (for example,h/2J for AF fluctuations) and the optical properties are probed over a sufficiently broad frequency range, to extract the dynamics of the electron-boson coupling. Recent advances in ultrafast optical spectroscopy have succeeded in separately fulfilling these requirements. For example, high-temporal-resolution (<15 fs) experiments 7,8 have been carried out to investigate the...

We investigate the electronic band structure of two of the rare-earth nitrides, DyN and SmN. Resistivity measurements imply that both materials have a semiconducting ground state, and both show resistivity anomalies coinciding with the magnetic transition, despite the different magnetic states in DyN and SmN. X-ray absorption and emission measurements are in excellent agreement with densities of states obtained from LSDA+U calculations, although for SmN the calculations predict a zero band gap.

This paper contains a summary of selected aspects of the epitaxial growth of rare‐earth nitride thin films and the recent progress achieved in this field. The discussion is focussed on GdN, SmN, EuN compounds grown by both pulsed laser deposition and molecular beam epitaxy on different substrates including YSZ (001), c‐plane (0001) AlN and GaN. While a N2 plasma cell is used as a nitrogen source for growing EuN, we take advantage of the catalytic breakdown of molecular nitrogen by rare‐earth atoms to grow GdN and SmN in the absence of activated N2. The structural, magnetic and transport properties of the thin films are assessed by reflection high‐energy electron diffraction, x‐ray diffraction, Hall Effect, temperature‐dependent magnetization and resistivity. (© 2012 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)