2007
DOI: 10.1103/physrevb.76.245120
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Comparison between experiment and calculated band structures for DyN and SmN

Abstract: We investigate the electronic band structure of two of the rare-earth nitrides, DyN and SmN. Resistivity measurements imply that both materials have a semiconducting ground state, and both show resistivity anomalies coinciding with the magnetic transition, despite the different magnetic states in DyN and SmN. X-ray absorption and emission measurements are in excellent agreement with densities of states obtained from LSDA+U calculations, although for SmN the calculations predict a zero band gap.

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Cited by 63 publications
(84 citation statements)
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“…8 is not directly affected by contamination by Eu 2+ , and it shows a shape that is consistent with that measured in other rare-earth nitrides. 18,22 As expected the XES agrees well in shape with the calculated N-p PDOS in either LSDA+U or GW theories.…”
Section: Comparison Of Spectroscopies With Theorysupporting
confidence: 82%
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“…8 is not directly affected by contamination by Eu 2+ , and it shows a shape that is consistent with that measured in other rare-earth nitrides. 18,22 As expected the XES agrees well in shape with the calculated N-p PDOS in either LSDA+U or GW theories.…”
Section: Comparison Of Spectroscopies With Theorysupporting
confidence: 82%
“…This provides evidence that growth of EuN using nitrogen gas requires that the nitrogen source be excited. This is in contrast to other rare-earth nitrides such as GdN, SmN, or DyN, which can be grown 22,59 under a partial pressure of non-excited N 2 , hinting at different chemistry involved in EuN growth.…”
Section: A Epitaxial Film Growthmentioning
confidence: 72%
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“…The electronic structure results based on the LSDA+U method favor a half-metallic ground state, whereas if we include the spin-orbit coupling a magnetic AFtype II structure is obtained with moments that nearly cancel. The nearly linear field dependence of the SmN magnetization, at 2 K, experimentally observed in a thin film close to being stoichiometric, [13] is not in contradiction with AF ordering. In addition, the presence of SO coupling leads to and enlarged semiconducting gap.…”
Section: Resultsmentioning
confidence: 66%