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AlN/Mo/Sc 0. 2 Al 0. 8 N composite structure films were prepared on Si (100) substrate by pulsed DC magne• tron sputtering， and the epitaxy of GaN films was grown by metal-organic chemical vapor deposition(MOCVD).Atomic force microscopy， high-resolution X-ray diffraction， powder X-ray diffraction， scanning electron microscopy and Raman spectroscopy were used to study the effect of the thickness of the Mo layer on the crystal quality of the Sc 0. 2 Al 0. 8 N layer and the GaN epitaxial layer， and the importance of the Sc 0. 2 Al 0. 8 N layer for the GaN epitaxial layer grown on Mo was also studied. The results show that the thickness of the Mo layer is an important factor affecting the Sc 0. 2 Al 0. 8 N layer and the GaN epitaxial layer， and the Sc 0. 2 Al 0. 8 N layer is of great significance to the epitaxy of GaN on Mo. When the thickness of the Mo layer is 400 nm， the crystal quality of the GaN epitaxial layer is the best， the