Abstract:AlN/Mo/Sc 0. 2 Al 0. 8 N composite structure films were prepared on Si (100) substrate by pulsed DC magne• tron sputtering, and the epitaxy of GaN films was grown by metal-organic chemical vapor deposition(MOCVD).Atomic force microscopy, high-resolution X-ray diffraction, powder X-ray diffraction, scanning electron microscopy and Raman spectroscopy were used to study the effect of the thickness of the Mo layer on the crystal quality of the Sc 0. 2 Al 0. 8 N layer and the GaN epitaxial layer, and the importance… Show more
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