The E0 band gap energies and the lattice constants of zinc-blende Zn1−xMgxSe alloys grown by molecular beam epitaxy in the composition range of 0≤x≤0.95 are determined. A nonlinear dependence on the composition is observed for both the band-gap energies and the lattice con- stants of the ternary alloys. To our knowledge this is an initial report of a bowing in the lattice constant of a ternary II–VI alloy. Considering the bowings, the band-gap energy and the lattice constant of zinc-blende MgSe are extrapolated to be about 4.0 eV and 5.91 Å, respectively.
Quantum dots and quantum wires based on CdZnSe/ZnSe single quantum well heterostructures have been achieved using electron beam lithography and wet chemical etching. Photoluminescence spectra of the dot and wire structures show a blue shift due to lateral quantization for lateral dimensions below 40 nm. For the dot ground state, a lateral confinement energy of 16 meV is obtained for 28 nm diameter structures. For wires with widths on the order of 20 nm, lateral confinement energies of about 5 meV are observed. The dot diameter and wire width dependence of the emission energies can be described based on a square well potential and the measured sizes of the structures.
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