The ability to control dynamics of quantum states by optical interference, and subsequent electrical read-out, is crucial for solid state quantum technologies. Ramsey interference has been successfully observed for spins in silicon and nitrogen vacancy centres in diamond, and for orbital motion in InAs quantum dots. Here we demonstrate terahertz optical excitation, manipulation and destruction via Ramsey interference of orbital wavepackets in Si:P with electrical read-out. We show milliradian control over the wavefunction phase for the two-level system formed by the 1s and 2p states. The results have been verified by all-optical echo detection methods, sensitive only to coherent excitations in the sample. The experiments open a route to exploitation of donors in silicon for atom trap physics, with concomitant potential for quantum computing schemes, which rely on orbital superpositions to, for example, gate the magnetic exchange interactions between impurities.

While organic semiconductors provide tantalizing possibilities for low-cost, light-weight, flexible electronic devices, their current use in transistors-the fundamental building block-is rather limited as their speed and reliability are not competitive with those of their inorganic counterparts and are simply too poor for many practical applications. Through self-assembly, highly ordered nanostructures can be prepared that have more competitive transport characteristics; however, no simple, scalable method has been discovered that can produce devices on the basis of such nanostructures. Here, we show how transistors of self-assembled molecular nanowires can be fabricated using a scalable, gradient sublimation technique, which have dramatically improved characteristics compared to those of their thin-film counterparts, both in terms of performance and stability. Nanowire devices based on copper phthalocyanine have been fabricated with threshold voltages as low as -2.1 V, high on/off ratios of 10, small subthreshold swings of 0.9 V/decade, and mobilities of 0.6 cm/V s, and lower trap energies as deduced from temperature-dependent properties, in line with leading organic semiconductors involving more complex fabrication. High-performance transistors manufactured using our scalable deposition technique, compatible with flexible substrates, could enable integrated all-organic chips implementing conventional as well as neuromorphic computation and combining sensors, logic, data storage, drivers, and displays.

Impact of oxygen on the permanent deactivation of boron-oxygen-related recombination centers in crystalline silicon