Effect of boron on interstitial-related luminescence centers in silicon

Charnvanichborikarn, Supakit; Villis, B. J.; Johnson, Brett C.; Wong‐Leung, Jennifer; McCallum, Jeffrey C.; Williams, James S.; Jagadish, Chennupati

doi:10.1063/1.3300836

Cited by 15 publications

(21 citation statements)

References 28 publications

(27 reference statements)

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“…Photoluminescence measurements indicate that the W line intensity is maximized after annealing in the range 250 − 300 • C and vanishes upon annealing at ∼ 500 • C [5,6]. As the W line intensity diminishes in PL spectra, the X line raises and reaches maximum intensity after annealing in the range 400−500 • C and vanishes upon annealing at ∼ 600 • C [5,6,8].…”

Section: Introductionmentioning

confidence: 98%

“…As the W line intensity diminishes in PL spectra, the X line raises and reaches maximum intensity after annealing in the range 400−500 • C and vanishes upon annealing at ∼ 600 • C [5,6,8]. The temperature regime at which their presence is maximized along with the fact that their intensity decreases as the damage concentration increases suggest that defects responsible for these lines should be of small size [7,8].…”

Section: Introductionmentioning

confidence: 99%

“…The centers responsible for these lines are present in ion-implanted [5,6,7,8,9] as well as in high energy electron-and proton-irradiated c-Si [10,11]. As W and X centers are generated during irradiation processes, they coexists with a large variety of defects which makes their identification through experiments difficult.…”

Section: Introductionmentioning

confidence: 99%

“…The temperature regime at which their presence is maximized along with the fact that their intensity decreases as the damage concentration increases suggest that defects responsible for these lines should be of small size [7,8]. It is widely accepted that the W and X centers are of interstitial nature since their intensity is modified when there are self-interstitial traps (B, C) [5,9] whereas it is practically unaffected by the presence of vacancy traps (O) [9]. From the dependence of the W photon energy under uniaxial-stress and magnetic field perturbations Davies et al deduced that the W center had trigonal symmetry, and they observed a sharp local vibrational mode (LVM) at 70 meV, along with other sharp resonances at 60, 56 and 51 meV [4].…”

Section: Introductionmentioning

confidence: 99%

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Insights on the atomistic origin of X and W photoluminescence lines inc-Si fromab initiosimulations

Santos¹,

Aboy²,

López³

et al. 2016

J. Phys. D: Appl. Phys.

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Abstract.We have used atomistic simulations to identify and characterize interstitial defect cluster configurations candidates to W and X photoluminescence centers in crystalline Si. The configurational landscape of small self-interstitial defect clusters has been explored through nanosecond annealing and implantation recoil simulations using classical molecular dynamics. Among the large collection of defect configurations obtained, we have selected those defects with the trigonal symmetry of the W center, and the tetrahedral and tetragonal symmetry of the X center. These defect configurations have been characterized using ab initio simulations in terms of their donor levels, their local vibrational modes, the defect induced modifications of the electronic band structure, and the transition amplitudes at band edges. We have found that the so called I 3 -V is the most likely candidate for W PL center. It has a donor level and local vibrational modes in better agreement with experiments, a lower formation energy, and stronger transition amplitudes than the so called I 3 -I, which was previously proposed as W center. With respect to defect candidates to X PL center, our calculations have shown that none of analyzed defect candidates match all of the experimental characteristics of the X center. Although the Arai tetra-interstitial configuration previously proposed as X center cannot be excluded, the other defect candidates to X center found, I 3 -C and I 3 -X, cannot either being discarded.

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Section: Introductionmentioning

confidence: 98%

Section: Introductionmentioning

confidence: 99%

Section: Introductionmentioning

confidence: 99%

Section: Introductionmentioning

confidence: 99%

See 2 more Smart Citations

Insights on the atomistic origin of X and W photoluminescence lines inc-Si fromab initiosimulations

Santos¹,

Aboy²,

López³

et al. 2016

J. Phys. D: Appl. Phys.

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“…In fact, the luminescence from the W-center is seen to reach a maximum after a 225-275ºC annealing and can be reduced to levels where they are no longer observed after annealing at temperatures around 450ºC [4][5]. Although different experiments have shown that these lines are related to small defects generated by ion implantation [2][3][4][5][6], it is not quite clear yet which is the specific defect that produces them. Some experiments have revealed that they are associated to Si self-interstitial clusters with a small number of Si interstitials [4,6].…”

Section: Interstitial Related Luminescence Centersmentioning

confidence: 89%

Simulation study of ion implanted defects associated to luminescence centers in silicon

Aboy

Santos

Pelaz

et al. 2011

Proceedings of the 8th Spanish Conference on Electron Devices, CDE'2011

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Ion implantation is a technique commonly used in the fabrication of semiconductor devices. The introduction of ions generates a large concentration of defects in the Si lattice. The presence of these defects can adversely affect the device performance. Conversely, in more recent years, ion induced defects have opened the possibility of new Si based optoelectronic devices. The areas which are currently being explored for efficient light emission in Si include luminescence through optically active defect clusters and extended defects. An interstitial related luminescence centre which is often present in ion implanted Si is the W-center. In this work we analyzed by KMC simulations the influence of the presence of B atoms and the annealing temperature on the density of Si interstitial defects in ion implanted samples, which in turn affect the luminescence of the W-center.

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Effect of boron on formation of interstitial‐related luminescence centres in ion implanted silicon

McCallum

Villis

Johnson

et al. 2010

Physica Status Solidi (a)

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The presence of boron in silicon has been shown to have a deleterious effect on the luminescence of interstitial‐related centres, particularly the W‐centre which is often observed after ion implantation and a low temperature anneal. Competition between silicon‐interstitial and boron‐interstitial centre formation is considered to be a possible mechanism underlying this dramatic reduction. Previous work on silicon implantation of boron‐doped substrates is extended to examine the effect of B implantation itself on W‐centre formation. W centres formed via the implantation of B and a low temperature anneal and via a Si implant over an activated B‐implant profile followed by low temperature anneal are compared. These studies contrast the effects of boron and silicon implantation and examine the effect of overlapping implantation profiles. Studying the effect of boron on optical centre formation provides insight into defect interactions in silicon and new data for theoretical modelling.

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Effect of boron on interstitial-related luminescence centers in silicon

Abstract: Impact of oxygen on the permanent deactivation of boron-oxygen-related recombination centers in crystalline silicon

Cited by 15 publications

References 28 publications

Insights on the atomistic origin of X and W photoluminescence lines inc-Si fromab initiosimulations

Insights on the atomistic origin of X and W photoluminescence lines inc-Si fromab initiosimulations

Simulation study of ion implanted defects associated to luminescence centers in silicon

Effect of boron on formation of interstitial‐related luminescence centres in ion implanted silicon

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