An experiment was carried out to study oxidation-enhanced and oxidation-retarded diffusion (OED and ORD) of Sb in (100) and (111) Si wafers oxidized in dry O2 at 1160 °C. The ORD data of (100) wafers agree well with those of Mizuo and Higuchi and with the prediction of a model assuming that Si self-interstitials and vacancies coexist in Si in thermal equilibrium at high temperatures. A small adjustment to the interstitial supersaturation values is needed to bring the ORD/OED data of (111) wafers to fit with the model satisfactorily. This indicates the existence of a mechanism which injects vacancies into (111) wafers in addition to the normal mechanism of interstitial injection due to SiO2 growth.
This work focuses on the quality of epitaxial silicon deposited when the total thickness grown is in the range of 0.5–0.9 μm from the initial physical interface. Shallow junctions were fabricated to evaluate device potential of the thin films. Defect levels were evaluated. The ability to reproduce doping profiles was also evaluated. The studies have shown that the epitaxial silicon deposited to 0.5 μm thickness is suitable for device fabrication.
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