The estimate of measurement uncertainties in XAFS spectra is one of the most important and difficult aspects of error analysis for XAFS data. Since several different analysis methods are used to determine structural parameters and their uncertainties from XAFS data, and no universally agreed-upon standard exists, the ability to compare estimates of uncertainties from different methods is vital. We discuss numerical aspects of the propagation of measurement uncertainties from raw absorption coefficient to analyzed signal in k-and R-space. We focus our attention on the conversion of measurement uncertainties between k-and R-space representations of XAFS data, and on the testing of this conversion procedure for data dominated by random fluctuations.
Electrical leakage in low-k dielectric/Cu interconnects is a continuing reliability concern for advanced <22 nm technologies. One leakage mechanism deserving increased attention is electron transport across the Cu/dielectric capping layer interface. The Schottky barrier formed at this interface is an important parameter for understanding charge transport across this interface. In this report, we have utilized x-ray photoelectron spectroscopy to investigate the Schottky barrier formed at the interface between polished Cu substrates and standard low-k a-SiC(N):H dielectric capping layers deposited by Plasma Enhanced Chemical Vapor Deposition. The authors find the Schottky Barrier at this interface to range from 1.45 to 2.15 eV depending on a-SiC(N):H composition and to be largely independent of various in situ plasma pretreatments.
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