Practical selectivity window of selective epitaxial growth (SEG) using a H 2 /SiH 4 /Cl 2 cyclic chemical vapor deposition (CVD) system has been investigated with the batch-type vertical furnace equipment, replacing a conventional single-wafer H 2 /dichlorosilane/HCl CVD system. The process temperature was less than 700 • C, which is suitable for a low thermal budget process applicable to next-generation memories including vertical pn-diode switches. Selectivity loss is quantified by an in-line inspection tool to determine the practical number of selectivity losses. The H 2 /SiH 4 /Cl 2 cyclic CVD system provides an excellent capacity of 40 wafers per batch. Selectivity loss, which is one of the most crucial features in the SEG process for the diode application, is controlled with both the amount of SiH 4 and Cl 2 and the period of gas supply, and the practical number of selectivity loss is confirmed to be less than 100 in 200 mm wafers. Without high temperature annealing in hydrogen ambient, low temperature cyclic SEG in the batch reactor ensures the clean interface and improved crystalline quality of SEG-Si, as well as high throughput.
In situ boron-doped silicon films were deposited by a novel LPCVD process in the gas system. A high deposition rate and good thickness uniformity of films were obtained by the process. The silicon film annealed becomes polycrystalline with strong (111) texture. The polycrystalline silicon films annealed at were made of small grains. A uniform distribution of boron concentration was obtained in the silicon films and penetration of boron into the silicon substrate through the layer was not observed. The resistivity of the boron-doped silicon films was dependent on the annealing temperature and time and the minimum value of the resistivity was . Furthermore, good breakdown characteristics were achieved and the average breakdown field intensity was . This process provides a reliable gate deposition process for a sub-micrometre CMOS device with a surface channel.
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