The Ge2Sb,Tes (GST) thin film is well known to play a critical role in PRAM (Phase Change Random Access Memory). Through device simulation, we found that highresistive GST is indispensable to minimize the writing current of PRAM. For the first time, we tried to increase the GST resistivity by doping nitrogen. Doping nitrogen to GST successfully reduced writing current. Also, the cell endurance
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