Advanced plasma technology in microelectronics

Jung, C. O.; Chi, Kyeong-Koo; Hwang, Bohee; Moon, Joo Tae; Lee, M.Y; Lee, J.G

doi:10.1016/s0040-6090(98)01522-3

Cited by 42 publications

(31 citation statements)

References 6 publications

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“…1 In reactive ion etching, either plasma or laser-induced, the most important reaction is the formation of fluorine atoms, 2-5 which further react with silicon or any other semiconductor material promoting the etching. Methyl fluoride is a prototype fluorinated hydrocarbon for which the fundamental spectroscopic properties and dissociation paths can be studied in detail.…”

Section: Introductionmentioning

confidence: 99%

Multireference CI Study of Excitation Energies and Potential Energy Surfaces of CH₃F

Bauerfeldt

Lischka

2004

J. Phys. Chem. A

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Vertical excitation energies for the eight singlet-excited electronic states 1 1 E (2e f 3s), 2 1 E (2e f 3p a1) , 3 1 E (2e f 3p e ), 2 1 A 1 (2e f 3p e ), 1 1 A 2 (2e f 3p e ), 3 1 A 1 (2p a1 f 3s), 4 1 A 1 (2p a1 f 3p a1 ), and 4 1 E (2p a1 f 3p e ) of CH 3 F were investigated using the SA-MCSCF, MR-CISD, and MRCISD+Q approaches. Our results mostly confirm the experimental assignments but suggest some modifications for the main contribution to the maximum observed in the range from 12.5-14 eV. The dissociation channels for the production of fluorine atoms have been characterized. Potential energy curves for the dissociation of the CF bond under C 3V symmetry restrictions were computed for all states mentioned above leading to the ground-state dissociation channel CH 3 (X ˜2A 2 ′′) + F( 2 P), the excited-state channels CH 3 (3s 2 A 1 ′) + F( 2 P) and CH 3 (3p 2 A 2 ′′) + F( 2 P) and also to the ionic limit CH 3 + ( 1 A 1 ′) + F -( 1 S). All curves except the one for the ionic state show repulsive behavior. The search for a global minimum for the ionic state led to the structure H 2 CH + Fin the 3 1 A′ state. It is strongly bound by 5.67 eV with respect to the ionic dissociation limit of F -+ CH 3 + . † Part of the special issue "Fritz Schaefer Festschrift".

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Section: Introductionmentioning

confidence: 99%

Multireference CI Study of Excitation Energies and Potential Energy Surfaces of CH₃F

Bauerfeldt

Lischka

2004

J. Phys. Chem. A

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“…3,9 Pulsed plasmas have also been shown to mitigate charging damage, such as notching and bowing. 10,11 In particular, the after-glow phase of a pulsed plasma helps mitigate charging damage as positive ions are not accelerated towards the bottom of the features where charge typically accumulates. In pulsed electronegative plasmas, negative ions may be extracted during the after-glow period and accelerated into the feature which neutralizes the charge at the bottom of the features.…”

Section: Introductionmentioning

confidence: 99%

Extraction of negative ions from pulsed electronegative capacitively coupled plasmas

Agarwal

Rauf

Collins

2012

Journal of Applied Physics

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Charge buildup during plasma etching of dielectric features can lead to undesirable effects, such as notching, bowing, and twisting. Pulsed plasmas have been suggested as a method to achieve charge-free plasma etching. In particular, electronegative plasmas are attractive as the collapse of the plasma potential during the after-glow period of pulsed capacitively coupled plasmas (CCPs) can allow for extraction of negative ions into the feature. The extraction of negative ions in the after-glow of pulsed CCPs sustained in CF 4 containing gas mixtures is computationally investigated. In this paper, the consequences of pulse frequency and gas chemistry on negative ion flux to the wafer are discussed. A low negative ion flux to the wafer was observed only in the late after-glow period of low pulse frequencies. The negative ion flux was found to significantly increase with the addition of highly electronegative gases (such as thermally attaching Cl 2 ) even at a high pulse frequency of 10 kHz. As the production of negative ions during the after-glow diminishes, alternative strategies to enhance the flux were also pursued. The flux of negative ions was found to increase by the addition of a pulsed dc voltage on the top electrode that is 180 out-of-phase with the rf pulse. V C 2012 American Institute of Physics. [http://dx.

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“…Low-temperature plasmas are widely employed in technological micro-electronics and nanotechnology processes [1], either in the fabrication scheme or as an auxiliary tool, for pre or post surface treatment [2][3][4]. In particular, proper preparation of the samples is absolutely essential in electron microscopy, to avoid artifacts or contaminants, usually hydrocarbons originated in their manipulation.…”

Section: Introductionmentioning

confidence: 99%

Design and characterization of an RF plasma cleaner

Canal¹,

Luna²,

Ruchko³

et al. 2010

Braz. J. Phys.

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The design and characterization of an innovative device for plasma cleaning, based upon a non-conventional radio-frequency discharge, is described. The RF fields are produced by an antenna placed inside the metallic vacuum chamber. Theoretical models are described to calculate both the electro-magnetic field structure and the spatial impurity distribution, due to erosion of the antenna. The electron energy distribution function is determined with a standard RF-filtered electrostatic probe; it is found that the plasma is well described by a Druyvesteyn energy distribution function.

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Advanced plasma technology in microelectronics

Cited by 42 publications

References 6 publications

Multireference CI Study of Excitation Energies and Potential Energy Surfaces of CH₃F

Multireference CI Study of Excitation Energies and Potential Energy Surfaces of CH₃F

Extraction of negative ions from pulsed electronegative capacitively coupled plasmas

Design and characterization of an RF plasma cleaner

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Advanced plasma technology in microelectronics

Cited by 42 publications

References 6 publications

Multireference CI Study of Excitation Energies and Potential Energy Surfaces of CH3F

Multireference CI Study of Excitation Energies and Potential Energy Surfaces of CH3F

Extraction of negative ions from pulsed electronegative capacitively coupled plasmas

Design and characterization of an RF plasma cleaner

Contact Info

Product

Resources

About

Multireference CI Study of Excitation Energies and Potential Energy Surfaces of CH₃F

Multireference CI Study of Excitation Energies and Potential Energy Surfaces of CH₃F