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This paper presents a low-cost microcontroller-based data acquisition device. The key component of the presented solution is a configurable microcontroller-based device with an integrated USB transceiver and a 12-bit analogue-to-digital converter (ADC). The presented embedded DAQ device contains a preloaded program (firmware) that enables easy acquisition and generation of analogue and digital signals and data transfer between the device and the application running on a PC via USB bus. This device has been developed as a USB human interface device (HID). This USB class is natively supported by most of the operating systems and therefore any installation of additional USB drivers is unnecessary. The input/output peripheral of the presented device is not static but rather flexible, and could be easily configured to customised needs without changing the firmware. When using the developed configuration utility, a majority of chip pins can be configured as analogue input, digital input/output, PWM output or one of the SPI lines. In addition, LabVIEW drivers have been developed for this device. When using the developed drivers, data acquisition and signal processing algorithms as well as graphical user interface (GUI), can easily be developed using a well-known, industry proven, block oriented LabVIEW programming environment.

The deposition rates of protective coatings resembling polydimethylsiloxane (PDMS) were measured with numerous sensors placed at different positions on the walls of a plasma-enhanced chemical vapor deposition (PECVD) reactor with a volume of approximately 5 m3. The plasma was maintained by an asymmetric capacitively coupled radiofrequency (RF) discharge using a generator with a frequency 40 kHz and an adjustable power of up to 8 kW. Hexamethyldisiloxane (HMDSO) was leaked into the reactor at 130 sccm with continuous pumping using roots pumps with a nominal pumping speed of 8800 m3 h−1 backed by rotary pumps with a nominal pumping speed of 1260 m3 h−1. Deposition rates were measured versus the discharge power in an empty reactor and a reactor loaded with samples. The highest deposition rate of approximately 15 nm min–1 was observed in an empty reactor close to the powered electrodes and the lowest of approximately 1 nm min–1 was observed close to the precursor inlet. The deposition rate was about an order of magnitude lower if the reactor was fully loaded with the samples, and the ratio between deposition rates in an empty reactor and loaded reactor was the largest far from the powered electrodes. The results were explained by the loss of plasma radicals on the surfaces of the materials facing the plasma and by the peculiarities of the gas-phase reactions typical for asymmetric RF discharges.

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