Organic semiconductors have generated considerable interest for their potential for creating inexpensive and flexible devices easily processed on a large scale [1][2][3][4][5][6][7][8][9][10][11]. However technological applications are currently limited by the low mobility of the charge carriers associated with the disorder in these materials [5][6][7][8]. Much effort over the past decades has therefore been focused on optimizing the organisation of the material or the devices to improve carrier mobility. Here we take a radically different path to solving this problem, namely by injecting carriers into states that are hybridized to the vacuum electromagnetic field. These are coherent states that can extend over as many as 10 5 molecules and should thereby favour conductivity in such materials. To test this idea, organic semiconductors were strongly coupled to the vacuum electromagnetic field on plasmonic structures to form polaritonic states with large Rabi splittings ∼ 0.7 eV. Conductivity experiments show that indeed the current does increase by an order of magnitude at resonance in the coupled state, reflecting mostly a change in field-effect mobility as revealed when the structure is gated in a transistor configuration. A theoretical quantum model is presented that confirms the delocalization of the wave-functions of the hybridized states and the consequences on the conductivity. While this is a proof-of-principle study, in practice conductivity mediated by light-matter hybridized states is easy to implement and we therefore expect that it will be used to improve organic devices. More broadly our findings illustrate the potential of engineering the vacuum electromagnetic environment to modify and to improve properties of materials.Light and matter can enter into the strong coupling regime by exchanging photons faster than any competing dissipation processes. This is normally achieved by placing the material in a confined electromagnetic environment, such as a Fabry-Perot (FP) cavity composed of two parallel mirrors that is resonant with an electronic transition in the material. Alternatively, one can use surface plasmon resonances as in this study. Strong coupling leads to the formation of two hybridized light-matter polaritonic states, P+ and P-, separated by the so-called Rabi splitting, as illustrated in Figure 1a. According to quantum electrodynamics, in the absence of dissipation, the Rabi splitting for a single molecule is given bywhere ω is the cavity resonance or transition energy ( the reduced Planck constant), 0 the vacuum permittivity, v the mode volume, d the transition dipole moment of the material and n ph the number of photons present in the system. The last term implies that, even in the dark, the Rabi splitting has a finite value which is due to the interaction with the vacuum electromagnetic field. This vacuum Rabi splitting can be further increased by coupling a large number N of oscillators to the electromagnetic mode since Ω N R ∝ √ N [12]. In this ensemble coupling, in addition to P+ an...

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A new technique is required which enables tailoring of the morphology of a metallic nanostructured material down to the 10 nm length scale. Using nanoporous nuclear track etched membranes as templates for electrodeposition, an assembly of wires with diameters as low as 30 nm could be obtained. Alternating the electrodeposition of two metals resulted in multilayers grown perpendicular to the wire axis. Layer thicknesses as low as 2 nm could be reached. Application is demonstrated by making wires 6 μm long, 80 nm in diameter, having a succession of either Co and Cu layers or of (Ni,Fe) and Cu layers. Wires containing layers of 5–10 nm in thickness exhibited a giant magnetoresistance. The current was naturally perpendicular to the layers. At ambient temperature, a magnetoresistance of 14% for Co/Cu and of 10% for (Fe,Ni)/Cu was observed.

The construction of soft and processable organic material able to display metallic conduction properties-a large density of freely moving charges-is a major challenge for electronics. Films of doped conjugated polymers are widely used as semiconductor devices, but metallic-type transport in the bulk of such materials remains extremely rare. On the other hand, single-walled carbon nanotubes can exhibit remarkably low contact resistances with related large currents, but are intrinsically very difficult to isolate and process. Here, we describe the self-assembly of supramolecular organic nanowires between two metallic electrodes, from a solution of triarylamine derivative, under the simultaneous action of light and electric field triggers. They exhibit a combination of large conductivity values (>5 × 10(3) S m(-1)) and a low interface resistance (<2 × 10(-4) Ω m). Moreover, the resistance of nanowires in series with metal interfaces systematically decreases when the temperature is lowered to 1.5 K, revealing an intrinsic metallic behaviour.

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Magnetoelectric films are proposed as key components for spintronic applications. The net magnetic moment created by an electric field in a magnetoelectric thin film influences the magnetization state of a neighbouring ferromagnetic layer through exchange coupling. Pure electrical control of magnetic configurations of giant magnetoresistance spin valves and tunnelling magnetoresistance elements is therefore achievable. Estimates based on documented magnetoelectric tensor values show that exchange fields reaching 100 mT can be obtained. We propose a mechanism alternative to current-induced magnetization switching, providing access to a wide range of device impedance values and opening the possibility of simple logic functions.

The Fe(II) spin crossover complex [Fe{H B(pz) } (bipy)] (pz = pyrazol-1-yl, bipy = 2,2'-bipyridine) can be locked in a largely low-spin-state configuration over a temperature range that includes temperatures well above the thermal spin crossover temperature of 160 K. This locking of the spin state is achieved for nanometer thin films of this complex in two distinct ways: through substrate interactions with dielectric substrates such as SiO and Al O , or in powder samples by mixing with the strongly dipolar zwitterionic p-benzoquinonemonoimine C H (-⋯ NH ) (-⋯ O) . Remarkably, it is found in both cases that incident X-ray fluences then restore the [Fe{H B(pz) } (bipy)] moiety to an electronic state characteristic of the high spin state at temperatures of 200 K to above room temperature; that is, well above the spin crossover transition temperature for the pristine powder, and well above the temperatures characteristic of light- or X-ray-induced excited-spin-state trapping. Heating slightly above room temperature allows the initial locked state to be restored. These findings, supported by theory, show how the spin crossover transition can be manipulated reversibly around room temperature by appropriate design of the electrostatic and chemical environment.

The spin state of [Fe(H2B(pz)2)2(bipy)] thin films is mediated by changes in the electric field at the interface of organic ferroelectric polyvinylidene fluoride with trifluoroethylene (PVDF-TrFE). Signatures of the molecular crossover transition are evident in changes in the unoccupied states and the related shift from diamagnetic to paramagnetic characteristics. This may point the way to the molecular magneto-electric effect on devices.