We perform electroluminescence (EL) intensity analysis on large-area monolithically-integrated Cu(In,Ga)Se2 (CIGS) modules. EL was measured in two modes: a fixed voltage near V MP, and a fixed current injection near IMP' The EL intensity was integrated across the image to give quantitative values ELv and EL" respectively. Differences in ELv between different modules reflect differences in average neutral bulk electronic properties (parameterized by carrier diffusion length Lo), while ELI is related to both neutral bulk and Space Charge Region (SCR) collection (dependent on both Lo and non-radiative recombination lifetime parameter t). Significant differences in EL intensity are observed between modules made with different precursor structures. By conducting large-area EL intensity analysis, we have demonstrated a method for decoupling and comparing neutral bulk and SCR collection properties of the absorbers in large area monolithically integrated CIGS modules.
Over the past decade, the PV industry has witnessed tremendous growth in manufacturing scale and technology advancement, with PV generated electricity cost ever approaching grid parity. Among them, Si based thin film technology has made substantial progress in demonstrating its inherent advantages in lower material cost, ease of manufacturing and higher energy yield, etc. More recently, reduced product prices and competing technologies from crystalline silicon and other thin film technologies have made amorphous and microcrystalline silicon based thin film technology very challenging, and requires further increase in module efficiency and decrease in manufacturing cost. As one of the few companies in the world with significant manufacturing capacity for tandem thin film Si PV products, Chint Solar (Astronergy) has been at the forefront of technology development for the mass production of large-scale (Gen. 5, 1.43m2) Si thin film solar modules in the last 5 years. We will review major technology advancements which have been mass production proven and led to the mass produced tandem silicon thin film module with 10.0% plus stabilized efficiency, along with the field performance of those modules.
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