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This articles describes the preliminary design and fabrication results of micro carbon-nano-tube (CNT) column for electron-beam lithography. The column consists of gated single vertical aligned CNT electron source and one metal electrostatic lens. The CNT electron source was fabricated by combination of optical lithography, electronbeam writing and inductively coupled plasma chemical vapor deposition (ICP-CVD) growth. The simulated minimum spot size was 80 nm with one metal electrostatic lens for a 40 nm diameter CNT.

In this paper, we discuss an approach to fabricating a carbon nanotubes (CNTs) gate electrode structure for cold cathode emitter applications. The field emission behavior of the structure was studied by using single vertically aligned free-standing CNTs of various lengths and gate electrodes of various sizes to determine the optimal emission structure. A single CNT electrode source with a gate electrode was fabricated by combining optical lithography, electron-beam lithography (EBL), and inductively coupled plasma chemical vapor deposition (ICP-CVD). A single mask was adopted to define the gated structure and nano sized catalyst for CNT growth. A vertically aligned CNT was then grown within the gate hole by ICP-CVD. The CNT height inside the gate could be lengthened by multiple growth processes without affecting the field emission capability. The best turn-on fields, defined as the field required to generate an emission current of 1 nA, were approximately 1.66 and 1.38 V/mm, respectively. The turn-on field emission current saturated when the CNT length was about the same as the gate height.

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