The aim of the current research work was to study the physicochemical and biological properties of synthesized zinc doped hydroxyapatite (ZnHAp) nanoparticles with Zn concentrations Zn = 0 (HAp), Zn = 0.07 (7ZnHAp), and Zn = 0.1 (10ZnHAp) for potential use in biological applications. The morphology, size, compositions, and incorporation of zinc into hydroxyapatite were characterized by scanning electron microscopy (SEM), transmission electron microscopy (TEM), Fourier Transform Infrared Spectroscopy (FTIR), Raman scattering, and X-Ray Photoelectron Spectroscopy (XPS). In addition, the cytotoxicity of ZnHAp nanoparticles was tested on both E. coli bacteria and human hepatocarcinoma cell line HepG2. The results showed that ZnHAp nanoparticles (HAp, 7ZnHAp, and 10ZnHAp) have slightly elongated morphologies with average diameters between 25 nm and 18 nm. On the other hand, a uniform and homogeneous distribution of the constituent elements (calcium, phosphorus, zinc, and oxygen) in the ZnHAp powder was noticed. Besides, FTIR and Raman analyses confirmed the proper hydroxyapatite structure of the synthesized ZnHAp nanoparticles with the signature of phosphate, carbonate, and hydroxyl groups. Moreover, it can be concluded that Zn doping at the tested concentrations is not inducing a specific prokaryote or eukaryote toxicity in HAp compounds.

A novel gate dielectric, with nitrogen confined within the top 0.7nm of the oxide surface, has been demonstrated in a 0.18pm CMOS process.High nitrogen concentrations (>lo%), incorporated by remote plasma nitridation (RPN), are demonstrated to suppress boron penetration in 4.0nm gate dielectrics with no degradation in n-ch or p-ch mobility. Drive currents with the RPN oxide were equivalent to, or exceeded those obtained with an Si02 control. Various gate doping schemes were explored to quantify contributions of poly depletion and Rsd on device performance. It was found that poly depletion accounts for less than one-half of the drive current improvement when PMOS source/drain doping is increased. [ I ] [2] [3] [4] [5] [6] [7] [8] E Hasegawa et al , IEDM Tech Dig , p 327 (1995) H Momose et al , IEEE Trans Elec Dev , v ED-41, p 546 ( 1994) 2 Ma et al , IEEE Trans Elec Dev , ED-41, p 1364 (1994) M Luo et al,

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