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The field-orientation dependent thermal conductivity of the heavy-fermion superconductor UPt3 was measured down to very low temperatures and under magnetic fields throughout the distinct superconducting phases: B and C phases. In the C phase, a striking twofold oscillation of the thermal conductivity within the basal plane is resolved reflecting the superconducting gap structure with a line of node along the a axis. Moreover, we find an abrupt vanishing of the oscillation across a transition to the B phase, as a clear indication of a change of gap symmetries. We also identify extra two line nodes below and above the equator in both B and C phases. From these results together with the symmetry consideration, the gap function of UPt3 is determined as a E(1u) representation characterized by a combination of two line nodes at the tropics and point nodes at the poles.

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The Schottky source/drain metal-oxide-semiconductor field-effect transistor (MOSFET) has potential for scaling to the nanometer regime, because low electrode resistances with very shallow extension can be realized using metal source/drain. In this study, very short channel n- and p-type Schottky source/drain MOSFETs with silicon-on-insulator (SOI) structure were analyzed theoretically, and n-type devices were demonstrated experimentally. It was shown theoretically that a drivability of the Schottky source/drain MOSFET comparable to that of conventional MOSFETs can be realized with a low Schottky barrier height. The short-channel effect can be suppressed even with a 15-nm-long channel at t OX = 1 nm and t SOI = 3 nm. The room-temperature operation of sub-50-nm n-type ErSi2 Schottky source/drain MOSFETs on a separation by implanted oxygen (SIMOX) substrate was demonstrated.