More recently aluminum doped zinc oxide (ZnO:Al) thin films have attracted a lot of attention as an alternative to indium tin oxide (ITO) for optoelectronic devices in order to produce energy such as solar cells. In this work, ZnO:Al thin films were deposited onto quartz and silicon substrates by RF magnetron sputtering technique and the effect of Al doping on structural, optical and sensing properties of the films were studied. The dopant concentration was varied between 1 wt.% and 3 wt.% in the thin films. The crystalline structure of the films were investigated by X-ray diffraction, which indicated wurtzite structure along (100) plane. The surface morphology of the films characterized by AFM revealed that the grain size decreased with increasing dopant concentration.The films also exhibited changes in optical properties due to a decrease in band gap with increasing Al concentration. Hall measurement confirmed that the ZnO films exhibited an n-type conductivity. The results of gas sensing experiments showed that the sensitivity of the ZnO films for detecting CO2 enhanced with an increase in dopant concentration.
Spin coating technique has been used to deposit various concentration of Multi-wall carbon nanotube (MWCNTs) thin films on flexible substrate of polyethylene terephthalate (PET) as electrode, the study shows the effect of (1, 2, 3 mg/ml) concentration of (MWCNTs) thin films, by AFM, optical and electrical measurements which is indicate that the best concentration is2 mg/ml according to (2, 3D) images, which shown widespread and regular spread of CNTs, low absorption of wavelengths (400, 550, 700 nm) at low concentrations, and compatible increase of responsivity with increased current for PET-MWCNTs/MEH-PPV:MWCNTs/AL as photodetector device.
In this work dithine complexes prepared from dithiol benzil ligand and central ion to the Ni,Pd,Pt, element the ligand and complexes have been investigated using FTIR spectrophotometer and uv-vis-NIR spectral reigns show higher intensity represents the ?-?* transition in the chromopher cycle .These absorption which appear in visible and near IR spectral regions ,According to the complexes of one group ,the spectral shifting due to the change of central ion has been found to be related to atomic number of central ion .This shifting is increased while decreasing the central ion atom number These complexes have been implemented in Nd+2:YAG cavity because each posses resonant absorption band near Nd+2:YAG, Nd+2:Glass emitting at (1060nm). pulse duration measured to complexes dissolved in dioxin(2*10-3M) is very short compared with free running pulse duration ,therefore the complexes work as Q-switch to the NIR lasers.
In this research thin films from SnO2 semiconductor have been prepared by using chemical pyrolysis spray method from solution SnCl2.2H2O at 0.125M concentration on glass at substrate temperature (723K ).Annealing was preformed for prepared thin film at (823K) temperature. The structural and sensing properties of SnO2 thin films for CO2 gas was studied before and after annealing ,as well as we studied the effect temperature annealing on grain size for prepared thin films .
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