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Threading dislocation-governed degradation in crystal quality of heteroepitaxial materials: The case of InAlN nearly lattice-matched to GaN J. Appl. Phys. 111, 053535 (2012) Ferroelectric domain structures of 0.4-μm-thick Pb(Zr,Ti)O3 films prepared by polyvinylpyrrolidone-assisted SolGel method J. Appl. Phys. 111, 054109 (2012) Columnar grain growth of FePt (L10) Cobalt ferrite thin films were grown on SiO 2 / Si͑100͒ substrates using pulsed-laser deposition technique at substrate temperatures ranging from 250 to 600°C. Thermal expansion mismatch between the film and substrate appears to have a substantial effect on the magnetic properties of the cobalt ferrite films, due to the large magnetoelastic coupling of cobalt ferrite. It was shown in this study, that polycrystalline films with ͑111͒-preferred orientation could be prepared at substrate temperatures as low as 250°C. The growth of crystalline cobalt ferrite films at such low temperatures indicates the potential to use cobalt ferrite for microelectromechanical systems devices and sensor applications including integration with a wider range of multilayer device structures.

A generalized form of anhysteretic magnetization function to extend Jiles–Atherton theory to different forms of anisotropy has been derived. The general equation for the function has been compared with those of calculations made on the basis of known equations for specific cases: axially anisotropic (one-dimensional), planar anisotropic (two-dimensional), and isotropic (three-dimensional). The Jiles–Atherton model using the proposed functional form of generalized anhysteretic magnetization function for anisotropy dependence has been validated and the necessary equations derived. It has been shown in this work that this functional form of anhysteretic magnetization with necessary boundary conditions can be reduced to the familiar specific model equations in the particular cases.

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