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A new ultralow dielectric loss cofired CaMgGeO4 dielectric material with olivine structure was fabricated by the solid-state route. The X-ray patterns, Rietveld refinement, and microstructure revealed the characteristics of the synthesized material. CaMgGeO4 ceramic belongs to the orthorhombic system with a Pbmn space group. Sintered at 1300 °C for 6 h, the ceramic exhibited a densification of 96.5%, an ultrahigh quality factor (Q × f) of 124 900 GHz (tan δ = 1.24 × 10–4) at a frequency of 15.5 GHz, a permittivity (εr) of 6.71, and a temperature coefficient of resonant frequency (τf) of −73.7 ppm/°C, and the average coefficient of thermal expansion of CaMgGeO4 was 12.4 ppm/°C. The sintering temperature of the CaMgGeO4 ceramic was reduced from 1300 to 940 °C with the addition of 5 wt % B2O3. The CaMgGeO4 + 5 wt % B2O3 ceramics exhibited favorable microwave dielectric performances: Q × f = 102 000 GHz (at 16.4 GHz), εr = 5.80, and τf = −64.7 ppm/°C, respectively. In addition, the CaMgGeO4 ceramic did not react with Ag electrodes, which could be advantageous in low-temperature cofired ceramic multilayer microwave devices.

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CuInSe 2 single crystals have been studied employing photoluminescence (PL), optical reflection (OR), optical absorption (OA) and wavelength derivative reflection (WDR) techniques at temperatures from 4.2 to 300 K. Exciton-related peaks were observed in the near-band-edge region of the PL spectra: several narrow lines, with full width at half maximum (FWHM) of about 0.3 meV, and two wider peaks (FWHM about 0.7 meV) at 1.0414 (A) and 1.0449 eV (B). The A and B peaks were also observed in the OR and OA spectra and identified as A and B free excitonic states. The narrow lines were attributed to bound exciton recombination on intrinsic defects. A third exciton resonance (C) was observed in the WDR spectra at 1.2779 eV. The crystal-field and spin-orbit splittings were derived to be 5.3 and 234.7 meV, respectively.

Laser-Induced Breakdown Spectroscopy (LIBS) of silicon was performed using a nanosecond pulsed frequency doubled Nd:YAG (532 nm) laser. The temporal evolution of the laser ablation plumes was characterized under a range of low pressures. Electron densities were determined from the Stark broadening of the Si (I) 288.16 nm emission line and were found to be in the range 2.79 × 10 16 cm-3 to 5.59 × 10 19 cm-3. Excitation temperatures of 9000-21000 K were calculated using the Si (I) 288.16 nm emission line to continuum ratio. The morphology of the laser plume, observed with respect to time, was seen to be strongly dependent on the ambient pressure. The density and temperature of the plasma was also found to vary critically with plasma morphology. Three ambient pressure regimes were identified where the plasma evolution was observed to differ markedly. Requirements for the existence of local thermal equilibrium conditions in the laser-induced plasmas are discussed with respect to these results.

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