The review deals with different materials science aspects of state-of-the-art magnetic memory technologies, such as magnetoresistive random-access memory (MRAM), antiferromagnetic (AFM) memory, and skyrmion racetrack memory. Particularly, the materials with high perpendicular magnetic anisotropy (PMA), such as CoFeB, L10-ordered Mn- and Fe-based alloys, are considered (Sec. 1) regarding their applications in MRAM technology. Furthermore, studies of AFM alloys, such as FeRh, CuMnAs, Mn2Au, are reviewed (Sec. 2) with an emphasis on the application of these materials in AFM-memory technology. Finally, the last (3rd) section of the review is concerning materials that could be used in skyrmion racetrack memory.
We study the crystal structure of carbon-doped Al-rich MnAl thin films deposited on Si substrates. The effects of carbon content and vacuum heat treatment parameters are studied. It is shown that the carbon content, in combination to heat treatment, allows to tailor structural phase transitions in the films. The main phases detected are Al2Mn3, pure Mn, and pure C. As carbon content increases, the amount of Al2Mn3 phase decreases and the content of pure crystallized Mn phase increases. In addition, it is shown that as the heat treatment temperature increases – up to 500 °C – the Al2Mn3 phase content increases, whereas a pure C phase appears at lower temperatures.
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