The emergence of perpendicular magnetic anisotropy (PMA) in CoFeB/MgO stacks deposited on W using a Ta buffer layer is studied as a function of Ta and CoFeB layer thickness and annealing temperature. It is shown that very thin Ta “dusting” layers (thickness between 0.3 and 1 nm) enhance PMA of CoFeB layers grown on top of W. We find that Ta thickness is a crucial factor affecting magnetic anisotropy and it needs to be scaled proportionally to CoFeB thickness for obtaining PMA. Stacks without Ta have in-plane anisotropy, verifying the “PMA-enhancing” role of Ta. The maximum effective PMA energy (3.6×106 erg/cm3) is obtained for a stack with 1.4 nm of CoFeB and 1 nm of Ta and after annealing at 350 °C. Besides, PMA can be obtained even at the as-deposited state for certain thicknesses. This W-based CoFeB/MgO system could enable the development of low power consumption, high density, and non-volatile magnetic memories.

The effect of arrays of nanometer scale pores on the magnetic properties of thin films has been analyzed. Particularly, we investigated the influence of the out-of-plane magnetization component created by the nanopores on the in-plane magnetic behavior of patterned hard/soft magnetic thin films in antidot morphology. Its influence on the coupling in Co/Py bilayers of few tens of nanometer thick is compared for disordered and ordered antidots of 35-nm diameter. The combination of magneto-optical Kerr effect (MOKE) and first-order reversal curve (FORC) technique allows probing the effects of the induced perpendicular magnetization component on the bilayer magnetic behavior, while magnetic force microscopy (MFM) is used to image it. We found that ordered antidots yield a stronger out-of-plane component than disordered ones, influencing in a similar manner the hard layer global in-plane magnetic behavior if with a thin or without soft layer. However, its influence changes with a thicker soft layer, which may be an indication of a weaker coupling.

We report on the study of arrays of 60 nm wide cobalt antidots, nanopatterned using focused ion beam milling. Square and hexagonal symmetry arrays have been studied, with varying antidot densities and lattice constant from 150 up to 300 nm. We find a strong increase of the arrays' magnetic coercivity with respect to the unpatterned film, which is monotonic as the antidot density increases. Additionally, there is a strong influence of the array symmetry to the in-plane magnetic anisotropy: square arrays exhibit fourfold symmetry and hexagonal arrays exhibit sixfold symmetry. The above findings are corroborated by magnetic imaging and micromagnetic modeling, which show the magnetic structure of the arrays to depend strongly on the array morphology.

Ultrathin FePt films (thickness between 1 nm and 5 nm) were studied for non‐volatile memories applications. The films were magnetron sputtered on monocrystalline MgO⟨001⟩ substrates at 500 °C. The films are polycrystalline, except the 1 nm thick film which is not continuous. It is shown that films with thickness higher than 2.7 nm have L10 structure and perpendicular magnetic anisotropy, while a transition to in‐plane anisotropy occurs for thinner films. The out‐of‐plane coercivity drops from 16 kOe at the thicker film to 0.5 kOe at the thinner one.

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