This measurement problem occurs in testing or evaluating operational amplifiers, digital-to-analog converters, sample/hold amplifiers and other similar active circuits.
This paper describes the test apparatus and circuitry us,d to make measurements of pulsed light conductance on samples of high resistivity (10 a -cm) gallium arsenide switching devices, having nominal 25 um and 700 um gap spacings.Differences in conductance are observed on variously grown samples. Maximum peak light conductance obtained was =2 millisiemens for an effective irradiated optical power on the (25 um) gap of approximately 130 milliwatts (a = 850 nm). Comparisons are made between the observed pulse measurements and the pulse waveforms generated by computer simulation using a model based on a theoretical analysis of the relationships between photoconductance and irradiated optical power.
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