We report an inelastic electron tunneling spectroscopy study on MgO magnetic junctions with thin barriers (0.85-1.35 nm). Inelastic electron tunneling spectroscopy reveals resonant electronic trapping within the barrier for voltages V>0.15  V. These trapping features are associated with defects in the barrier crystalline structure, as confirmed by high-resolution transmission electron microscopy. Such defects are responsible for resonant tunneling due to energy levels that are formed in the barrier. A model was applied to determine the average location and energy level of the traps, indicating that they are mostly located in the middle of the MgO barrier, in accordance with the high-resolution transmission electron microscopy data and trap-assisted tunneling conductance theory. Evidence of the influence of trapping on the voltage dependence of tunnel magnetoresistance is shown.

Magnetic tunnel junctions (MTJs) with thin barriers are already used as read sensors in recording media. However, the presence of pinholes across such few A thick barriers cannot be excluded and one needs to investigate their effect on the MTJ-transport properties. By applying large electrical currents we could change the electrical resistance of the studied MgO MTJs (due to pinhole-size variations), and study how pinholes influence the barrier parameters (thickness t and height phi) obtained by fitting current-voltage characteristics to Simmons' model. We found that, with decreasing resistance, the barrier thickness (height) decreases (increases). These results were well reproduced by a model of parallel-resistances, allowing us to estimate pinhole-free barrier parameters.

In this work silver-rich and sulfur-rich silver sulfide (Ag2S) thin films were fabricated using a diversified set of experimental methods, namely ion beam deposition and atmosphere- and solution-based sulfurizations. The composition of the Ag2S thin films was studied using X-ray diffraction, Raman spectroscopy, scanning electron microscopy and energy dispersive X-ray spectroscopy. We found that it strongly depends on the fabrication conditions, such as sulfurization time and temperature. These conditions, in turn, affect the electrical characteristics of the thin films, namely the resistivity and resistive switching. We were able to control the Ag2S stoichiometry and infer its dependence on the fabrication parameters for all the followed methods.

Thin film nanogranular composites of cobalt ferrite (CoFe2O4) dispersed in a barium titanate (BaTiO3) matrix were deposited by laser ablation with different cobalt ferrite concentrations (x). Their structural and magnetic properties were characterized. The films were polycrystalline and composed by a mixture of tetragonal-BaTiO3 and CoFe2O4 with the cubic spinel structure. A slight (111) barium titanate phase orientation and (311) CoFe2O4 phase orientation were observed. The lattice parameter of the CoFe2O4 was always smaller than the bulk value indicating that the cobalt ferrite was under compressive stress. From atomic force microscopy a broad distribution of grain sizes was observed in the nanocomposites, with a significant amount of smaller grains (<40 nm) from the CoFe2O4 phase. The magnetic measurements show an increase of the magnetic moment from the low concentration region where the magnetic grains are more isolated and their magnetic interaction is small, towards the bulk value for higher CoFe2O4 content in the films. A corresponding decrease of coercive field with increasing cobalt ferrite concentration was also observed, due to the higher inter-particle magnetic interaction (and reduced stress) of the agglomerated grains.