2016
DOI: 10.1166/jnn.2016.10796
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Tuning the Stoichiometry of Ag<SUB>2</SUB>S Thin Films for Resistive Switching Applications

Abstract: In this work silver-rich and sulfur-rich silver sulfide (Ag2S) thin films were fabricated using a diversified set of experimental methods, namely ion beam deposition and atmosphere- and solution-based sulfurizations. The composition of the Ag2S thin films was studied using X-ray diffraction, Raman spectroscopy, scanning electron microscopy and energy dispersive X-ray spectroscopy. We found that it strongly depends on the fabrication conditions, such as sulfurization time and temperature. These conditions, in t… Show more

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Cited by 3 publications
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“…The Raman spectra of 1L MoS 2 taken at the edge area (with an optical change) and center area (without an optical change) are similar (Figures 1e and S2), consistent with that before UV irradiation (Figure 1c). In addition, there is no formation of any defect-related Raman peaks and other possible chemical bonds, such as Ag 2 S (∼244 cm −1 ) and Mo−O (∼820 cm −1 ) (Figure S3), 33,34 strongly confirming that the lattice structure of 1L MoS 2 at the edge area (with an optical change) is not damaged. Hence, the possibility of surface corrosion in 1L MoS 2 can be ruled out.…”
Section: ■ Results and Discussionmentioning
confidence: 73%
“…The Raman spectra of 1L MoS 2 taken at the edge area (with an optical change) and center area (without an optical change) are similar (Figures 1e and S2), consistent with that before UV irradiation (Figure 1c). In addition, there is no formation of any defect-related Raman peaks and other possible chemical bonds, such as Ag 2 S (∼244 cm −1 ) and Mo−O (∼820 cm −1 ) (Figure S3), 33,34 strongly confirming that the lattice structure of 1L MoS 2 at the edge area (with an optical change) is not damaged. Hence, the possibility of surface corrosion in 1L MoS 2 can be ruled out.…”
Section: ■ Results and Discussionmentioning
confidence: 73%
“…Sulfurization starts with the direct reaction of Ag atoms near the surface of the film and the Ag + ion mobility is very large, allowing a continuous reaction of the S with the diffusing Ag atoms on the growing surface. 31 As the Ag decoration content is substantially less than the S can be provided from ZnS sheets, a continuous reaction of the S with the infusing Ag might occur to form the Ag 2 S phase in the composite sheets. Similarly, for the TA80 and TA220, the formation of Ag 2 S phase on the ZnS sheet template is visibly presented in Figure S1a,b, respectively, revealing the designed Ag sputtering durations herein impelled the formation of Ag 2 S crystallites on ZnS after the subsequent annealing procedure.…”
Section: Resultsmentioning
confidence: 99%
“…that the reaction temperature of 350°C is sufficiently high to allow Ag being converted into Ag 2 S in the S precursor. Sulfurization starts with the direct reaction of Ag atoms near the surface of the film and the Ag + ion mobility is very large, allowing a continuous reaction of the S with the diffusing Ag atoms on the growing surface 31 . As the Ag decoration content is substantially less than the S can be provided from ZnS sheets, a continuous reaction of the S with the infusing Ag might occur to form the Ag 2 S phase in the composite sheets.…”
Section: Resultsmentioning
confidence: 99%
“…Figure 5 shows an increase of electrical resistivity with sulfurization time [17,18,19] due to the formation of Ag2S phase having an electrical resistivity 10 6 times higher than that of the Ag phase. The largest increase is obtained when layers have 0.3 and 0.5 µm thickness.…”
Section: Resultsmentioning
confidence: 99%