We investigate the effect of dopant random fluctuation on threshold voltage and drain current variation in a two-gate nanoscale transistor. We used a quantum-corrected technology computer aided design simulation to run the simulation (10000 randomizations). With this simulation, we could study the effects of varying the dimensions (length and width), and thicknesses of oxide and dopant factors of a transistor on the threshold voltage and drain current in subthreshold region (off) and overthreshold (on). It was found that in the subthreshold region the variability of the drain current and threshold voltage is relatively fixed while in the overthreshold region the variability of the threshold voltage and drain current decreases remarkably, despite the slight reduction of gate voltage diffusion (compared with that of the subthreshold). These results have been interpreted by using previously reported models for threshold current variability, load displacement, and simple analytical calculations. Scaling analysis shows that the variability of the characteristics of this semiconductor increases as the effects of the short channel increases. Therefore, with a slight increase of length and a reduction of width, oxide thickness, and dopant factor, we could correct the effect of the short channel.
This paper proposed a novel structure of a 10-bit, 400MS/s pipelined analog to digital convertor using 0.18 µm TSMC technology. In this paper, two stages are used to converter design and a new method is proposed to increase the speed of the pipeline analog to digital convertor. For this purpose, the amplifier is not used at the first stage and the buffer is used for data transfer to the second stage, in the second stage an amplifier circuit with accurate gain of 8 that is open loop with a new structure was used to speed up, also the design is such that the first 4 bits are extracted simultaneously with sampling. On the other hand, in this structure, since in the first stage the information is not amplified and transferred to the second stage, the accuracy of the comparator circuit should be high, therefore a new structure is proposed to design a comparator circuit that can detect unwanted offsets and eliminate them without delay, and thus can detect the smallest differences in input voltage. The proposed analog to digital convertor was designed with a resolution of 10 bits and a speed of 400MS/s, with the total power consumption 74.3mW using power supply of 1.8v.
A 10-bit pipelined Analog to Digital converter is proposed in this paper with using 0.18 µm TSMC technology. In this paper, a new structure is proposed to increase the speed of the pipeline analog to digital convertor. So at the first stage is not used the amplifier and instead the buffer is used for data transfer to the second stage. The speed of this converter is 350MS/s. An amplifier circuit with accurate gain of 6 and a very accurate unit gain buffer circuit that are open loop with a new structure were. used. In this Converter, the first 3 bits are extracted simultaneously with sampling. The proposed analog-to-digital converter was designed with the total power consumption 75mW using power supply of 1.8v.
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