We report the development of a Si-based micro thermogenerator build from silicon-oninsulator by using standard CMOS processing. Ultrathin layers of Si, 100 nm in thickness, with embedded n and p-type doped regions electrically connected in series and thermally in parallel, are the active elements of the thermoelectric device that generate the thermopower under various thermal gradients. This proof-of-concept device produces an output power density of 4.5 µW/cm 2 under a temperature difference of 5 K across the hot and cold regions.

The optical constants of ion-beam-sputtered SiC films have been measured by ellipsometry in the 190 to 950 nm range. The set of data has been extended both toward shorter and longer wavelengths with data in the literature, along with inter- and extrapolations, in order to obtain a self-consistent set of data by means of Kramers-Krönig analysis. All data correspond to films that were deposited by sputtering on nonheated substrates, and hence they are expected to be amorphous. A bandgap of 1.9 eV for the films was fitted from the obtained optical constants. A good global accuracy of the data was estimated through the use of various sum rules. The consistent dataset includes the visible to the extreme ultraviolet (EUV); this large spectrum of characterization will enable the design of multilayer coatings that combine a high reflectance in parts of the EUV with desired performance at a secondary range, such as the visible. To our knowledge, this paper provides the first compilation of the optical constants of amorphous SiC films.

Improved metal-graphene contacts for low-noise, high-density microtransistor arrays for neural sensing. Carbon, (2020). 161.

The optical constants of ion-beam-sputtered B₄C films have been measured by ellipsometry in the 190-950 nm range. The set of data has been extended toward both shorter and longer wavelengths with data in the literature, along with interpolations and extrapolations, in order to obtain a self-consistent set of data by means of Kramers-Krönig analysis. All data correspond to films that were deposited by sputtering on nonheated substrates, and hence they are expected to be amorphous. The B₄C bandgap was calculated as a fitting parameter of Tauc equations for indirect transitions using the present optical constants. Good global accuracy of the data was estimated through the use of various sum rules. The consistent data set includes the visible to the extreme UV (EUV); this large spectrum of characterization will enable the design of multilayer coatings that combine a relatively high reflectance in parts of the EUV with a desired performance at a secondary range, such as the visible.

Thermoelectricity (TE) is proving to be a promising way to harvest energy for small applications and to produce a new range of thermal sensors. Recently, several thermoelectric generators (TEGs) based on nanomaterials have been developed, outperforming the efficiencies of many previous bulk generators. Here, we presented the thermoelectric characterization at different temperatures (from 50 to 350 K) of the Si thin-film based on Phosphorous (n) and Boron (p) doped thermocouples that conform to a planar micro TEG. The thermocouples were defined through selective doping by ion implantation, using boron and phosphorous, on a 100 nm thin Si film. The thermal conductivity, the Seebeck coefficient, and the electrical resistivity of each Si thermocouple was experimentally determined using the in-built heater/sensor probes and the resulting values were refined with the aid of finite element modeling (FEM). The results showed a thermoelectric figure of merit for the Si thin films of z T = 0.0093, at room temperature, which was about 12% higher than the bulk Si. In addition, we tested the thermoelectric performance of the TEG by measuring its own figure of merit, yielding a result of ZT = 0.0046 at room temperature.