Zinc oxide (ZnO) is regarded as a promising alternative material for transparent conductive electrodes in optoelectronic devices. However, ZnO suffers from poor chemical stability. ZnO also has a moderate work function (WF), which results in substantial charge injection barriers into common (organic) semiconductors that constitute the active layer in a device. Controlling and tuning the ZnO WF is therefore necessary but challenging. Here, a variety of phosphonic acid based self‐assembled monolayers (SAMs) deposited on ZnO surfaces are investigated. It is demonstrated that they allow the tuning the WF over a wide range of more than 1.5 eV, thus enabling the use of ZnO as both the hole‐injecting and electron‐injecting contact. The modified ZnO surfaces are characterized using a number of complementary techniques, demonstrating that the preparation protocol yields dense, well‐defined molecular monolayers.
We report on the impact of partial fluorination of para-sexiphenyl (6P) on the growth mode when deposited on the non-polar ZnO(101̄0) surface. The evolution of the thin film structure and morphology is monitored by in situ atomic force microscopy and in situ real-time X-ray scattering. Both 6P and its symmetrical, terminally fluorinated derivative (6P-F4) grow in a highly crystalline mode, however, with a distinctly different morphology. While 6P films are characterised by the formation of two different phases with three-dimensional nanocrystallites and consequently a rather rough surface morphology, layer-by-layer growth and phase purity in case of 6P-F4 prevails leading to smooth terraced thin films. We relate the different growth behaviour to specifics of the thin film structure.
The influence of size effects on the thermoelectric properties of thin platinum films is investigated and compared to the bulk. Structural properties, like the film thickness and the grain size, are varied. We correlate the electron mean free path with the temperature dependence of the electrical conductivity and the absolute Seebeck coefficient SPt of platinum. A measurement platform was developed as a standardized method to determine SPt and show that SPt,film is reduced compared to SPt,bulk. Boundary and surface scattering reduce the thermodiffusion and the phonon drag contribution to SPt,film by nearly the same factor. We discuss in detail on behalf of a model, which describes the temperature dependence of the absolute Seebeck coefficient, the influence of size effects of electron-phonon and phonon-phonon interaction on SPt.
We investigate the influence of light on the growth process and resulting phase coexistence of the organic semiconductor α-sexithiophene (6T). We demonstrate that 6T thin films deposited on potassium chloride (KCl) in dark environments exhibit a bimodal growth, with phase coexistence of both low-temperature (LT) and high-temperature (HT) polymorphs. In contrast, films grown under illumination with 532 nm light at 1.5 W/cm 2 exhibit an increased purity of the LT phase, while the HT phase growth is slowed down by about a factor of 4. To understand the mechanism behind this optical control, we use in situ X-ray diffraction, atomic force microscopy, optical absorption measurements, as well as first-principles calculations for the optical absorption spectra of the HT and LT phase. We deduce that the phase purification is due to optical heating of the molecular film and lower cohesive energy of the HT phase compared to the LT phase, so that nucleation and growth of the HT phase are significantly reduced by light. On the basis of these findings, we suggest using light as a control parameter in organic molecular beam deposition to grow thin films of enhanced phase purity.
ABSTRACT:The microstructure, morphology, and growth dynamics of hexa-peri-hexabenzocoronene (HBC, C 42 H 18 ) thin films deposited on inert substrates of similar surface energies are studied with particular emphasis on the influence of substrate symmetry and substrate−molecule lattice matching on the resulting films of this material. By combining atomic force microscopy (AFM) with X-ray diffraction (XRD), X-ray absorption spectroscopy (NEXAFS), and in situ X-ray reflectivity (XRR) measurements, it is shown that HBC forms polycrystalline films on SiO 2 , where molecules are oriented in an upright fashion and adopt the known bulk structure. Remarkably, HBC films deposited on highly oriented pyrolytic graphite (HOPG) exhibit a new, substrate-induced polymorph, where all molecules adopt a recumbent orientation with planar π-stacking. Formation of this new phase, however, depends critically on the coherence of the underlying graphite lattice since HBC grown on defective HOPG reveals the same orientation and phase as on SiO 2 . These results therefore demonstrate that the resulting film structure and morphology are not solely governed by the adsorption energy but also by the presence or absence of symmetry-and lattice-matching between the substrate and admolecules. Moreover, it highlights that weakly interacting substrates of high quality and coherence can be useful to induce new polymorphs with distinctly different molecular arrangements than the bulk structure.
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