With the proliferation of ultra-high-speed mobile networks and internet-connected devices, along with the rise of artificial intelligence, the world is generating exponentially increasing amounts of data-data that needs to be processed in a fast, efficient and 'smart' way. These developments are pushing the limits of existing computing paradigms, and highly parallelized, fast and scalable hardware concepts are becoming progressively more important. Here, we demonstrate a computational specific integrated photonic tensor core-the optical analog of an ASIC-capable of operating at Tera-Multiply-Accumulate per second (TMAC/s) speeds. The photonic core achieves parallelized photonic inmemory computing using phase-change memory arrays and photonic chip-based optical frequency combs (soliton microcombs). The computation is reduced to measuring the optical transmission of reconfigurable and non-resonant, i.e. broadband, passive components operating at a bandwidth exceeding 14 GHz, limited only by the speed of the modulators and photodetectors. Given recent advances in hybrid integration of soliton microcombs at microwave line rates, ultra-low loss silicon nitride waveguides, and high speed on-chip detectors and modulators, our approach provides a path towards full CMOS wafer-scale integration of the photonic tensor core. While we focus on convolution processing, more generally our results indicate the major potential of integrated photonics for parallel, fast, efficient and wafer-scale manufacturable computational hardware in demanding AI applications such as autonomous driving, live video processing, and next generation cloud computing services.The increased demand for machine learning on very large datasets 1 and the growing offering of artificial intelligence services on the cloud 2-4 has driven a resurgence in custom hardware designed to accelerate multiply and accumulate (MAC) computations-the fundamental mathematical element needed for matrix-vector multiplication (MVM) operations. Whilst various custom silicon computing hardware (i.e. FPGAs 5 , ASICs 6 , and GPUs 7 ) have been developed to improve computational throughput and efficiency, they still depend on the same underlying electrical components which are fundamentally limited in both speed and energy by Joule heating, RF crosstalk, and capacitance 8 . The last of these (capacitance) dominates energy consumption and limits the maximum operating speeds in neural network hardware accelerators 9 since the movement of data (e.g. trained network weights), rather than arithmetic operations, requires the charging and discharging of chip-level metal interconnects. Thus, improving the efficiency of logic gates at the device level provides diminutive returns in such applications, if the flow of data during computation is not simultaneously addressed 10 . Even recent developments in the use of memristive crossbar arrays [11][12][13] to compute in the analog domain, whilst promising, do not have the potential for parallelizing the MVM operations (save for physically repli...

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Dissipative Kerr solitons (DKS) in optical microresonators provide a highly miniaturised, chip-integrated frequency comb source with unprecedentedly high repetition rates and spectral bandwidth. To date, such frequency comb sources have been successfully applied in the optical telecommunication band for dual-comb spectroscopy, coherent telecommunications, counting of optical frequencies and distance measurements. Yet, the range of applications could be significantly extended by operating in the near-infrared spectral domain, which is a prerequisite for biomedical and Raman imaging applications, and hosts commonly used optical atomic transitions. Here we show the operation of photonic-chip-based soliton Kerr combs driven with 1 micron laser light. By engineering the dispersion properties of a Si3N4 microring resonator, octave-spanning soliton Kerr combs extending to 776 nm are attained, thereby covering the optical biological imaging window. Moreover, we show that soliton states can be generated in normal group–velocity dispersion regions when exploiting mode hybridisation with other mode families.

Encoding information onto optical fields using electro-optical modulation is the backbone of modern telecommunication networks, offering vast bandwidth and low-loss transport via optical fibers [1]. For these reasons, optical fibers are also replacing electrical cables for short range communications within data centers [2]. Compared to electrical coaxial cables, optical fibers also introduce two orders of magnitude smaller heat load from room to milli-Kelvin temperatures, making optical interconnects based on electro-optical modulation an attractive candidate for interfacing superconducting quantum circuits [3-5] and hybrid superconducting devices [6]. Yet, little is known about optical modulation at cryogenic temperatures. Here we demonstrate a proof-of-principle cryogenic electro-optical interconnect, showing that currently employed Ti-doped lithium niobate phase modulators [7] are compatible with operation down to 800 mK-below the typical operation temperature of conventional microwave amplifiers based on high electron mobility transistors (HEMTs) [8, 9]-and maintain their room temperature Pockels coefficient. We utilize cryogenic electro-optical modulation to perform spectroscopy of a superconducting circuit optomechanical system, measuring optomechanically induced transparency (OMIT) [10][11][12][13]. In addition, we encode thermomechanical sidebands from the microwave domain onto an optical signal processed at room temperature. Although the currently achieved noise figure is significantly higher than that of a typical HEMT, substantial noise reduction should be attainable by harnessing

Due to the slowdown of Moore’s law, it will become increasingly challenging to efficiently scale the network in current data centers utilizing electrical packet switches as data rates grow. Optical circuit switches (OCS) represent an appealing option to overcome this issue by eliminating the need for expensive and power-hungry transceivers and electrical switches in the core of the network. In particular, optical switches based on tunable lasers and arrayed waveguide grating routers are quite promising due to the use of a passive core, which increases fault tolerance and reduces management overhead. Such an OCS-network can offer high bandwidth, low network latency and an energy-efficient and scalable data center network. To support dynamic data center workloads efficiently, however, it is critical to switch between wavelengths at nanosecond (ns) timescales. Here we demonstrate ultrafast OCS based on a microcomb and semiconductor optical amplifiers (SOAs). Using a photonic integrated Si3N4 microcomb, sub-ns (<520 ps) switching along with the 25-Gbps non-return-to-zero (NRZ) and 50-Gbps four-level pulse amplitude modulation (PAM-4) burst mode data transmission is achieved. Further, we use a photonic integrated circuit comprising an Indium phosphide based SOA array and an arrayed waveguide grating to show sub-ns switching (<900 ps) along with 25-Gbps NRZ burst mode transmission providing a path towards a more scalable and energy-efficient wavelength-switched network for data centers in the post Moore’s Law era.