The paper presents a study on the effect of semiconductor die’s bond pad probe marks on the interface between the wire and the bond pad. The probe marks are quantified in terms of percentage area in the bond pad, while the interface strength between the wire of Gold material to the Aluminum bond pad is measured through the intermetallic coverage (IMC). Actual evaluation showed that the size of the probe marks has significant impact on the bond pad area, especially on IMC. Validations were made comparing the IMC and shear strength performance of the wire ball bonded on the worst-case probe marks and on the standard probe marks. The learnings on this study could be used on future works with similar requirement.
New and upcoming semiconductor devices and technologies are getting more challenging in assembly manufacturing process due to many factors such as complex package layout, process capability and critical bill of materials. This paper focused on the mitigation of the top major assembly reject of a semiconductor sensor device, that is the wire-to-wire shorting issue at wirebonding process. Parameter optimization particularly the looping segment 1 parameter, as well as using a reverse stitch on ball (RSOB) were employed to eliminate the wire-to-wire defect in wirebonding process. Finally, with the process optimization and improvement, a reduction of 98 percent wire-to-wire shorting occurrence was attained.
Technological change has brought the global market into broad industrialization and modernization. One major application in the semiconductor industry demands safety and high reliability with strict compliance requirement. This technical paper focuses on the package design solution of quad-flat no leads (QFN) to mitigate the leadframe bouncing and its consequent effect of lifted wire and/or non-stick on leads (NSOL) defects on multi-wire ground connection. Multi-wire on single lead ground (or simply Gnd) connection plays critical attribute in the test coverage risk assessment. Cases of missing wire and/or NSOL on the multi-wire Gnd connection cannot be detected at test resulting to Bin1 (good) instead of Bin5 (open) failure. To ease the failure modes mechanism, a new design of QFN leadframe package with lead-to-diepad bridge-type connection was conceptualized for device with extended leads and with multiple Gnd wires connection. The augmented design would provide better stability than the existing leadframe configurations during wirebonding. Ultimately, the design would help eliminate potential escapees at test of lifted Gnd wire not detected.
Intermetallic is a critical factor that is controlled and limit during manufacturing of integrated units. Through improving the ball flatness response of the semiconductor wire significantly impact the outcome for the intermetallic characteristic between metal such as Gold-Aluminum connection. The implementation of this study on the actual manufacturing control eliminates escapee of poor intermetallic that would impact the reliability and integrity of the package upon its application to the end product.
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