Scanning tunneling microscopy is used to analyze the nanoscale morphology of 25 ML films of Ag deposited on Ag(100) at temperatures (T) between 55 and 300 K. A transition from self-affine growth to "mound formation" occurs as T increases above about 140 K. The roughness decreases with increasing T up until 140 K in the self-affine growth regime, and then increases until about 210 K before decreasing again in the mounding regime. We analyze mounding behavior via a lattice-gas model incorporating: downward funneling of depositing atoms from step edges to lower fourfold hollow adsorption sites; terrace diffusion of adatoms with a barrier of 0.40 eV leading to irreversible island formation in each layer; efficient transport of adatoms along island edges to kink sites; and downward thermal transport of adatoms inhibited by a step-edge barrier of 0.06-0.07 eV along close-packed step edges (but with no barrier along kinked or open steps). This model reasonably recovers the T-dependence of not just the roughness, but also of the mound slopes and lateral dimensions above 190 K. To accurately describe lateral dimensions, an appropriate treatment of the intralayer merging of growing islands is shown to be critical. To describe behavior below 190 K, one must account for inhibited rounding of kinks by adatoms at island edges, as this controls island shapes, and thus the extent of open steps and of easy downward transport. Elsewhere, we describe the low-T regime of self-affine growth (with no terrace diffusion) accounting for a breakdown of the simple downward funneling picture. Keywords Ames Laboratory, Mathematics Disciplines Mathematics | Physical Chemistry CommentsThis article is from Physical Review B 63, no. 8 (2001) Scanning tunneling microscopy is used to analyze the nanoscale morphology of 25 ML films of Ag deposited on Ag͑100͒ at temperatures ͑T͒ between 55 and 300 K. A transition from self-affine growth to ''mound formation'' occurs as T increases above about 140 K. The roughness decreases with increasing T up until 140 K in the self-affine growth regime, and then increases until about 210 K before decreasing again in the mounding regime. We analyze mounding behavior via a lattice-gas model incorporating: downward funneling of depositing atoms from step edges to lower fourfold hollow adsorption sites; terrace diffusion of adatoms with a barrier of 0.40 eV leading to irreversible island formation in each layer; efficient transport of adatoms along island edges to kink sites; and downward thermal transport of adatoms inhibited by a step-edge barrier of 0.06-0.07 eV along close-packed step edges ͑but with no barrier along kinked or open steps͒. This model reasonably recovers the T-dependence of not just the roughness, but also of the mound slopes and lateral dimensions above 190 K. To accurately describe lateral dimensions, an appropriate treatment of the intralayer merging of growing islands is shown to be critical. To describe behavior below 190 K, one must account for inhibited rounding of kinks by adatoms ...

Scanning tunneling microscopy (STM) studies of the deposition of Ag on bcc NiAl(110) in the temperature range from 200 to 300 K reveal an initial bilayer growth mode. In this regime, which encompasses at least the first two levels of bilayer islands, the film appears to have an fcc Ag(110)-like structure. Selection of this structure reflects an almost perfect lateral match between the Ag(110) and NiAl(110) lattice constants. Density functional theory (DFT) analysis of supported Ag films with an ideal fcc(110) structure on NiAl(110) indicates that the bilayer growth mode is promoted by a quantum size effect. However, the system does not exhibit perfect Ag(110) film growth. STM analysis reveals that the tops of Ag islands are decorated by a ripple structure even in the initial levels of growth and also shows a deviation from Ag(110)-like bilayer growth to Ag(111)-like monolayer growth for thick films. DFT analysis is also applied to provide some insight into the observed deviations from perfect Ag(110) film structure.

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