A few-layer MoS2 photodetector driven by poly(vinylidene fluoride-trifluoroethylene) ferroelectrics is achieved. The detectivity and responsitivity are up to 2.2 × 10(12) Jones and 2570 A W(-1), respectively, at 635 nm with ZERO gate bias. E(g) of MoS2 is tuned by the ultrahigh electrostatic field from the ferroelectric polarization. The photoresponse wavelengths of the photodetector are extended into the near-infrared (0.85-1.55 μm).
BaTiO 3 / SrTiO 3 superlattices are found to have a critical periodicity of 30 SrTiO3 unit cells, below which the room-temperature symmetry is mm2 orthorhombic. The orthorhombic-tetragonal phase-transition temperature is shifted upward from the bulk value (<3 K and normally not observed at finite temperature) of the quantum paraelectric pure strontium titanate to temperatures above ambient (599 K for 30/30-unit-cell superlattices). Antidipole patterns appear in superlattices with unit cells below 10/10. A model is presented that accounts quantitatively for the change in second-harmonic generation intensity with superlattice periodicity from 4 unit cells to 50.
It has been suggested by several authors that SrTiO 3 layers in SrTiO 3 -BaTiO 3 superlattices should be tetragonal and ferroelectric at ambient temperatures, like the BaTiO 3 layers, rather than cubic, as in bulk SrTiO 3 , and that freeenergy minimization requires continuity of the polarization direction. A recent ab initio calculation constrained solutions to this structure. Surprisingly, our x-ray study shows that the SrTiO 3 layers are orthorhombic with 0.03% in-plane strain, with the BaTiO 3 c-axis matching the SrTiO 3 a-and b-axis better than the c-axis; strain energy overcomes the cost in electrostatic energy.
It is found that the voltage drop across a 170-nm-thick Pb(Zr0.4Ti0.6)O3 film keeps constantly at a well-defined coercive voltage during domain switching, irrespective of the applied voltage and frequency, and that the switching current of domains is reversely proportional to the resistance of loading resistors in the circuit. A simple formalism is derived for the speed of polarization reversal short into a few nanoseconds. The maximum speed of domain switching is limited by the time of compensation charge dissipation via loading resistors in the circuit, instead of reverse domain nucleation and growth. However, in most cases, the switching current decays with time and is thus peaked under different applied voltages, as observed in an 87-nm-thick film. This phenomenon is understood from our work due to the presence of interfacial passive layers that modulate switching current transient through the circuit RC-time constant, besides the consideration of a broad coercive-voltage distribution in a genuine thin film.
scite is a Brooklyn-based organization that helps researchers better discover and understand research articles through Smart Citations–citations that display the context of the citation and describe whether the article provides supporting or contrasting evidence. scite is used by students and researchers from around the world and is funded in part by the National Science Foundation and the National Institute on Drug Abuse of the National Institutes of Health.