Sub-threshold voltage operated circuits are the future for ultra-low-power applications. These circuits are inherently slow due to the very small sub-threshold currents. Here, the authors propose two approaches for improving the speed of SWCNT bundle interconnects driven by CNTFET-based circuits under sub-threshold conditions. First, the authors modulate the channel length of the CNTFETs that are used in the driver circuits to increase sub-threshold output current. The output current is maximum when the channel length is optimised to 15 nm. Second, the authors design driver circuits made of CNTFET-based inverters and transmission gates for SWCNT bundle interconnects at sub-threshold voltages. The authors consider five different configurations of the driver and load circuits. SPICE simulations show that transmission gates play a vital role in driver circuits by reducing the propagation delay and increasing the switching speed at high frequencies. Finally, the authors perform temperature-dependent analysis of the best cases from the proposed circuits and show that the propagation delay and power dissipated by them increases drastically at increased temperatures up to 500 K. 2 CNTFET current model CNTFET is regarded as the most advanced device which has similarities of MOSFET but has an advantage of working in
scite is a Brooklyn-based organization that helps researchers better discover and understand research articles through Smart Citations–citations that display the context of the citation and describe whether the article provides supporting or contrasting evidence. scite is used by students and researchers from around the world and is funded in part by the National Science Foundation and the National Institute on Drug Abuse of the National Institutes of Health.
hi@scite.ai
10624 S. Eastern Ave., Ste. A-614
Henderson, NV 89052, USA
Copyright © 2024 scite LLC. All rights reserved.
Made with 💙 for researchers
Part of the Research Solutions Family.