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SnS:In thin films have been successfully prepared on Pyrex substrates using low cost chemical bath deposition technique with different indium concentrations (y=[In][Sn]=4%,6%,8%,and10%). The structure, the surface morphology, and the optical properties of the SnS:In films were studied by x-ray diffraction, scanning electron microscope, atomic force microscopy, and spectrophotometer measurements. In order to obtain a thickness of the order of 308 ± 10 nm for potential applications in solar cell devices, a multilayer deposition has been prepared. It is found that the physical properties of tin sulphide are affected by indium concentration. In fact, x-ray diffraction study showed that better crystallinity in zinc blend structure with preferential orientations (111)ZB and (200)ZB was obtained for y equal to 6%. According to the AFM analysis, we remark that low average surface roughness value of SnS(ZB) thin film is obtained with In concentrations equal to y = 6%. Energy dispersive spectroscopy showed the existence of In, Sn, and S in the films. Optical analyses by means of transmission T(λ) and reflection R(λ) measurements show 1.57 eV as an optical band gap value of SnS:In(6%), which is lower than the previously obtained value (1.76 eV) for undoped tin sulphide. In doped tin sulphide exhibits a high absorption coefficient 2.5 × 106 cm−1, indicating that SnS:In can be used as absorber thin layer in photovoltaic structure such as SnS:In/ZnS/SnO2:F and SnS:In/In2S3/SnO2:F, where ZnS and In2S3 are chemically deposited as described in a previous work. In this study, the hetero-junctions SnS/In2S3:Al and SnS/ZnS:In are also investigated.

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Undoped zinc blend tin sulphide can be used as an absorber material in thin film solar cells. In the present study, SnS thin film has been doped with iron (Fe) at different concentrations (y = [Fe]/[Sn] = 4%, 6%, 8%, 10%). Structural, morphological, chemical, optical, and electrical properties were studied by X-Ray diffraction, scanning electron microscopy associated with energy dispersive spectroscopy, atomic force microscopy, and thermally stimulated current. X-ray diffraction study shows that better crystallinity is obtained for y = 8%. Scanning electron microscopy reveals that the surface morphology of the films strongly depends on the doping concentration. The energy dispersive spectroscopy shows the presence of Fe. The band gap energy is found to be about 1.6 eV. The thermally stimulated current is dominated by the trapping centers. It increases for y = 4% compared to the undoped SnS thin film. The activation energy of trapping centers in undoped and doped SnS thin layers is also calculated.

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Abstract. Zinc blend tin sulphide thin films have been successfully prepared on Pyrex substrates using low cost chemical bath depositiontechnique. In this work, we study the effect of time deposition on the physical properties of SnS thin film. A 200 nm thick layer is obtained as an optimum value for deposition time td equal to four hours. X-Ray diffraction study shows that SnS exhibits a zinc blend structure with preferential orientations (111)ZBand (200)ZB. Optical analyses by means of transmission T(λ) and reflection R(λ) measurements allow to determine the direct band gap energy value ≈1.7 eV. Thin layers of tin sulphide exhibit a high absorption coefficient up to 1.5×106cm-1in the visible domain, indicating that SnS compound has absorbing properties favorable for applications in solar cell devices.

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