Miniaturized integrated spectrometers will have unprecedented impact on applications ranging from unmanned aerial vehicles to mobile phones, and silicon photonics promises to deliver compact, cost-effective devices. Mirroring its ubiquitous free-space counterpart, a silicon photonics-based Fourier transform spectrometer (Si-FTS) can bring broadband operation and fine resolution to the chip scale. Here we present the modeling and experimental demonstration of a thermally tuned Si-FTS accounting for dispersion, thermo-optic non-linearity, and thermal expansion. We show how these effects modify the relation between the spectrum and interferogram of a light source and we develop a quantitative correction procedure through calibration with a tunable laser. We retrieve a broadband spectrum (7 THz around 193.4 THz with 0.38-THz resolution consuming 2.5 W per heater) and demonstrate the Si-FTS resilience to fabrication variations—a major advantage for large-scale manufacturing. Providing design flexibility and robustness, the Si-FTS is poised to become a fundamental building block for on-chip spectroscopy.

We theoretically consider the existence of multiple nonzero components of the second-order nonlinear susceptibility tensor, χ(2), generated via strain-induced symmetry breaking in crystalline silicon. We determine that, in addition to the previously reported χ(xxy)(2) component, the χ(yyy)(2) component also becomes nonzero based on the remaining symmetry present in the strained material. In order to characterize these two nonlinearities, we fabricate Fabry-Perot waveguide resonators on 250 nm thick silicon-on-insulator wafers clad with 180 nm of compressively stressed (-1.275  GPa) silicon nitride. We measure the shifts in these devices' modal effective indices in response to several bias electric fields and calculate the χ(eff,xxy)(2) and χ(eff,yyy)(2) nonlinear susceptibility tensor elements induced by the breaking of the guiding material's inversion symmetry. Through the incorporation of finite element simulations encompassing the theoretical distribution of strain, the applied bias field, and the optical modes supported by the waveguide geometry, we extract two phenomenological scaling coefficients which relate the induced optical nonlinearities to the local strain gradient.

No abstract

A 1 by 4 wavelength division multiplexer with 0.5nm bandwidth and no free spectral range limitation is demonstrated on silicon. The device utilizes wide bandwidth filters cascaded with ring resonators in order to select specific ring resonator modes and route each resonant mode to a separate port. This technology will enable dense wavelength division multiplexing covering the C - and L - bands with up to 100 10GB/s channels separated by 100GHz to be implemented for optical interconnects applications. A 1 by 4 wavelength division multiplexer with 3dB channel bandwidths as small as 0.5nm and 1dB insertion loss are demonstrated with 16dB inter-channel crosstalk suppression. A second wavelength division multiplexer scheme with four channels, each spaced 0.5nm apart without any free spectral range limitations is also demonstrated using wide bandwidth filters centered at the same wavelength to select resonances from four different ring resonators with slightly different widths.

No abstract