The present article evaluates, in qualitative and quantitative manners, the characteristics (i.e., thickness of layers, crystal structures, growth orientation, elemental diffusion depths, edge, and screw dislocation densities), within two GaN/AlN/Si heterostructures, that alter their efficiencies as positron moderators. The structure of the GaN film, AlN buffer layer, substrate, and their growth relationships were determined through high-resolution transmission electron microscopy (HR-TEM). Data resulting from high-resolution X-ray diffraction (HR-XRD) was mathematically modeled to extract dislocation densities and correlation lengths in the GaN film. Positron depth profiling was evaluated through an experimental Doppler broadening spectroscopy (DBS) study, in order to quantify the effective positron diffusion length. The differences in values for both edge ( ρ d e ) and screw ( ρ d s ) dislocation densities, and correlation lengths (Le, Ls) found in the 690 nm GaN film, were associated with the better effective positron diffusion length (Leff) of L eff GaN 2 = 43 ± 6 nm.

This study assesses the characteristics (edge and screw dislocation density) of a commercially available GaN/AlN/Al2O3 wafer. The heterostructure was evaluated by means of high-resolution X-ray diffraction (HR-XRD), high-resolution transmission electron microscopy (HR-TEM), and Doppler-Broadening Spectroscopy (DBS). The results were mathematically modeled to extract defect densities and defect correlation lengths in the GaN film. The structure of the GaN film, AlN buffer, Al2O3 substrate and their growth relationships were determined through HR-TEM. DBS studies were used to determine the effective positron diffusion length of the GaN film. Within the epitaxial layers, defined by a [GaN P 63 m c (0 0 0 2) || P 63 m c AlN (0 0 0 2) || (0 0 0 2) R 3 ¯ c Al2O3] relationship, regarding the GaN film, a strong correlation between defect densities, defect correlation lengths, and positron diffusion length was assessed. The defect densities ρ d e = 6.13 × 1010 cm−2, ρ d s = 1.36 × 1010 cm−2, along with the defect correlation lengths Le = 155 nm and Ls = 229 nm found in the 289 nm layer of GaN, account for the effective positron diffusion length Leff~60 nm.

Graphene decorated with gold nanoparticles (Au-rGO) was obtained in a single-step synthesis by exfoliating graphite rods via pulses of current. The morphological and structural features of Au-rGO were explored by TEM/SEM/EDX and XRD techniques. TEM images reveal the co-existence of thin and transparent sections corresponding to few-layer graphene along with darker regions corresponding to multi-layer graphene. Such a mixture was further confirmed by XRD examination of the sample. Au-rGO was next deposited on top of a screen-printed electrode (Au-rGO/SPE), and its electro-catalytic activity toward catechol oxidation was compared with that of a laccase-modified electrode (Lac/SPE). For Au-rGO/SPE, the dependence between the peak current and catechol concentration was linear within a wide range (1.0 × 10−9–1.0 × 10−3 M) with a sensitivity of 0.048 A/M. The limit of quantification was very low, 1.0 × 10−9 M, and the limit of detection was calculated to be 3.3 × 10−10 M (S/N = 3). In contrast, the Lac/SPE has three times lower sensitivity toward catechol (0.016 A M−1) and a higher LOD (3.3 × 10−6 M). The Au-rGO/SPE was tested for the detection of catechol in tap and mineral water samples with recovery percentages from 90.9% to 100.1%.

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Several aspects such as the growth relation between the layers of the GaN/AlN/SiC heterostructure, the consistency of the interfaces, and elemental diffusion are achieved by High Resolution Transmission Electron Microscopy (HR-TEM). In addition, the dislocation densities together with the defect correlation lengths are investigated via High-Resolution X-ray Diffraction (HR-XRD) and the characteristic positron diffusion length is achieved by Doppler Broadening Spectroscopy (DBS). Moreover, a comparative analysis with our previous work (i.e., GaN/AlN/Si and GaN/AlN/Al2O3) has been carried out. Within the epitaxial GaN layer defined by the relationship (111) 3C-SiC || (0002) AlN || (0002) GaN, the total dislocation density has been assessed as being 1.47 × 1010 cm−2. Compared with previously investigated heterostructures (on Si and Al2O3 substrates), the obtained dislocation correlation lengths (Le = 171 nm and Ls =288 nm) and the mean distance between two dislocations (rd = 82 nm) are higher. This reveals an improved crystal quality of the GaN with SiC as a growth template. In addition, the DBS measurements upheld the aforementioned results with a higher effective positron diffusion length = 75 ± 20 nm for the GaN layer.

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Numerous studies have reported the possibility of enhancing the properties of materials by incorporating foreign elements within their crystal lattice. In this context, while magnetite has widely known properties that have been used for various biomedical applications, the introduction of other metals within its structure could prospectively enhance its effectiveness. Specifically, zinc and cerium have demonstrated their biomedical potential through significant antioxidant, anticancer, and antimicrobial features. Therefore, the aim of the present study was to develop a series of zinc and/or cerium-substituted magnetite nanoparticles that could further be used in the medical sector. The nanostructures were synthesized through the co-precipitation method and their morpho-structural characteristics were evaluated through X-ray diffraction (XRD), inductively coupled plasma mass spectrometry (ICP-MS), X-ray photoelectron spectroscopy (XPS), dynamic light scattering (DLS), zeta potential, scanning electron microscopy (SEM), and energy dispersive X-ray spectroscopy (EDX) analyses. Furthermore, the nanostructures were subjected to a ROS-Glo H2O2 assay for assessing their antioxidant potential, MTT assay for determining their anticancer effects, and antimicrobial testing against S. aureus, P. aeruginosa, and C. albicans strains. Results have proven promising for future biomedical applications, as the nanostructures inhibit oxidative stress in normal cells, with between two- and three-fold reduction and cell proliferation in tumor cells; a two-fold decrease in cell viability and microbial growth; an inhibition zone diameter of 4–6 mm and minimum inhibitory concentration (MIC) of 1–2 mg/mL.

With the emergence of multi-core CPUs, parallel computing has made the leap from being a paradigm mainly used in high performance computing to imposing itself as one of the standards used in mainstream computing. The field of video compression and decompression naturally embraces parallel computing since video compression is a computationally intensive task that can be successfully distributed among two or more computing cores. This paper describes a different approach to video compression based on image vectorization on the novel Cell/B.E. architecture. Video frames are analyzed and interesting features such as edges, corners and patches are extracted, with significant performance speedups obtained on the Cell processor and maintaining good image quality. Finally, the features and the topological relations between them are used to reconstruct the original image.