We employ x-ray spectroscopy to characterize the distribution and magnetism of particular alloy constituents in (Ga,Fe)N films grown by metal organic vapor phase epitaxy. Furthermore, photoelectron microscopy gives direct evidence for the aggregation of Fe ions, leading to the formation of Fe-rich nanoregions adjacent to the samples surface. A sizable x-ray magnetic circular dichroism (XMCD) signal at the Fe L-edges in remanence and at moderate magnetic fields at 300 K links the high temperature ferromagnetism with the Fe(3d) states. The XMCD response at the N Kedge highlights that the N(2p) states carry considerable spin polarization. We conclude that FeN δ nanocrystals, with δ > 0.25, stabilize the ferromagnetic response of the films.

͑Co/ Au͒ and ͑Au/ Co/ Au͒ nanomagnet arrays grown on nanostructured self-organized SiGe templates have been characterized by means of x-ray photoemission electron microscopy, x-ray magnetic circular dichroism, and by extended x-ray absorption spectroscopy using synchrotron radiation. In-plane magnetization is observed at room temperature for practically all Co thicknesses, a stable macroscopic perpendicular magnetic order only at low temperature. The spin reorientation transition in these dot arrays takes place for smaller Co thicknesses over a broader thickness range than in two-dimensional systems. This finding appears to be related with structural relaxation modifications, occurring within the local Co atom environment, which are not necessarily connected with the orbital moment variations. These variations appear in the form of a systematic increase, correlated with the existence of out-of-plane magnetization.

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Ga 1−x Mn x As is commonly considered as a promising material for microelectronic applications utilizing the electron spin. One of the ways that allow increasing the Curie temperature above room temperature is to produce second phase inclusions. In this paper Ga 1−x Mn x As samples containing precipitations of ferromagnetic MnAs are under consideration. We focus on the atomic and electronic structure around the Mn atoms relating to the cluster formation. The changes in the electronic structure of the Mn, Ga and As atoms in the (Ga,Mn)As layers after high temperature annealing were determined by X-ray absorption near edge spectroscopy. The experimental spectra were compared with the predictions of ab initio full multiple scattering theory using the FEFF 8.4 code. The nominal concentration of the Mn atoms in the investigated samples was 6% and 8%. We do not observe changes in the electronic structure of Ga and As introduced by the presence of the Mn atoms. We find, in contrast, considerable changes in the electronic structure around the Mn atoms. Moreover, for the first time it was possible to indicate the preferred interstitial positions of the Mn atoms.

Articles you may be interested inStructural and magnetic properties of ( Ga , Mn ) As ∕ Al As multiple quantum wells grown by low-temperature molecular beam epitaxyThe structural and magnetic properties of MnSb layers grown on two differently oriented GaAs substrates are reported. The MnSb compounds grow nonhomogenously both on GaAs͑111͒B and on GaAs͑100͒ substrates. In x-ray diffraction studies the formation of two epitaxial domains is observed depending on the crystallographic orientation of the substrate. The observed diffusion of Ga atoms from the substrate to the layers results in the formation of an additional Mn-rich cubic phase of GaMnSb. In the case of the ͑100͒ oriented substrate, the diffusion of Mn into the substrate was additionally found. Traces of other phases were also noticed. The complex morphology of the layers is found to influence their magnetic properties. Magnetic force microscopy images revealed an inhomogenous distribution of the magnetic force gradient on the surface and the formation of magnetic domains in the samples. X-ray absorption studies of the chemical bonding and local atomic structure around Mn atoms confirmed high structural and chemical disorder in the samples. The chemical bonding of the dominating fraction of Mn atoms is found, however, similar to that in the reference MnSb powder. The x-ray magnetic circular dichroism measurements reveal an enhanced orbital moment and a reduced spin moment, which is most likely caused by the presence of different phases and a Mn-rich surface in the investigated samples.

We detect the presence of frozen magnetic moments in an exchange biased NiFe ferromagnet at the NiFe/FeMn ferromagnet/antiferromagnet interface by magnetic circular dichroism in x-ray absorption and resonant reflectivity experiments. Frozen moments are detected by means of the elementspecific hysteresis loops. A weak dichroic absorption with unidirectional anisotropy can be linked to frozen magnetic moments in the ferromagnet. A more pronounced exchange bias for increasing the thickness of the FeMn layer correlates with an increase in orbital moment for interface Ni atoms carrying a frozen moment. These atoms compose about a single monolayer, but only a fraction of the atoms contributes by means of a strongly enhanced orbital moment to the macroscopic exchange bias phenomenon. The microscopic spin-orbit energy associated with these few interface frozen moment atoms appears to be sufficient to account for the macroscopic exchange bias energy. 5 Current address: Outokumpu Stainless AB,

The miniaturized rotating disk equipment was suitable to use, in conjunction with the chemometric analyses, in the evaluation of the factors affecting the in vitro dissolution rate. The apparent solubility was found to be influenced by the same factors as G.

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