Pulsed Laser Deposition allows to obtain W and W-Ta alloy coatings with different nanostructures, monitored by X-ray diffraction. The correlation between such structures and the elastic properties is investigated for amorphous-like, ultra-nano-and nano-crystalline coatings obtained by tuning the gas pressure during deposition, annealing temperature and Ta concentration. The full elastic characterization is achieved by surface Brillouin spectroscopy, interpreted by isotropic and anisotropic film models. Amorphous like coatings are obtained with He pressures of tens of Pa. In comparison with bulk W, they have lower stiffness, by about 60%, closely correlated to the mass density (lower by about 40%). In the nanocrystalline regime the stiffness is more correlated to the average grain size, approaching the bulk values for increasing crystallite size. Vacuum annealing of amorphous like coatings leads to the nucleation of ultra-nano crystalline seeds, embedded in an amorphous matrix with intermediate values for mass density and stiffness. Here, the stiffness results from an interplay between the crystal size and the density. Alloying with Ta leads to properties which are consistent with the lever rule in the nanocrystalline regime, and deviate from it when the higher Ta concentration, interfering with crystal growth, induces an ultra-nano crystalline structure.
Micron-thick boron films have been deposited by Pulsed Laser Deposition in vacuum on several substrates at room temperature. The use of high energy pulses (>700 mJ) results in the deposition of smooth coatings with low oxygen uptake even at base pressures of 10 -4 -10 -3 Pa. A detailed structural analysis, by X-Ray Diffraction and Raman, allowed to assess the amorphous nature of the deposited films as well as to determine the base pressure that prevents boron oxide formation. In addition the crystallization dynamics has been characterized showing that film crystallinity already improves at relatively low temperatures (800 °C). Elastic properties of the boron films have been determined by Brillouin spectroscopy. Finally, micro-hardness tests have been used to explore cohesion and hardness of B films deposited on aluminum, silicon and alumina. The reported deposition strategy allows the growth of reliable boron coatings paving the way for their use in many technology fields.
Abstract. Tungsten oxide nanowires have been synthesized by vacuum annealing in the range 500• C -710• C from amorphous-like tungsten films, deposited on a Si(100) substrate by Pulsed Laser Deposition (PLD) in presence of a He background pressure. The oxygen required for the nanowires formation is already adsorbed in the W matrix before annealing, its amount depending on deposition parameters. Nanowire crystalline phase and stoichiometry depend on annealing temperature, ranging from W 18 O 49 -Magneli phase to monoclinic WO 3 . Sufficiently long annealing induces the formation of micrometer long nanowires, up to 3.6 µm with an aspect ratio up to 100. Oxide nanowires growth appears to be triggered by the crystallization of the underlying amorphous W film, promoting their synthesis at low temperatures.
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