The work contains literary and own data on the history of the development of silicon growing technologies with volumetric and surface heating of the melt. The advantages and disadvantages of technologies with surface heating are discussed. Examples are given of the implementation of such processes in the 60-70s of the last century and the reasons for the termination of the relevant works. Principal solutions for the realization of the crystal growth process with electron beam heating of the melt surface realized in KEPP EU (Latvia) are described. Differences in the management of the growing process of crystals with a constant diameter in comparison with the Czochralski method are discussed. The geometric and electro-physical properties of the obtained crystals are presented. Possible application of such crystals and the immediate tasks of technology development are described.
Efficiency of solar cells manufactured from FZ wafers is si g nificantly hi g her than if CZ or multicrystalline wafers are used. Hi g h cost of FZ silicon, however, limits applicability of such wafers. The aim of present work was a creation of rather price-efficient way of FZ feedstock production on base of pulling from skull with electron beam heating. Ingots pulled from skull were then successfully used as a feedstock rods in industrial FZ pullers. Further an experimental furnace has been created which enables growth of crystals of rather stable diameter up to 240 mm from silicon chunks.
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