Ingot pulling with electron beam heating: Process enhancements

Kravtsov, Anatoly; Kravtsov, Alexey; Fuksis, Rihards; Pudžs, Mihails

doi:10.1109/pvsc.2015.7355749

Cited by 2 publications

(2 citation statements)

References 2 publications

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“…As a result, the camera periodically "loses" the object of observation. We managed to solve this problem in principle [14], by taking arrangements to regulate the diameter by speed of pulling proportionally to a diameter change, however, the control over the melt level has not been solved yet. As a result of the operations carried out, an industrial-scale plant designated to grow silicon polycrystalline rods (Fig.…”

Section: Growing Crystals With Electron Beam Heatingmentioning

confidence: 99%

Development of Silicon Growth Techniques from a Melt with Surface Heating

Kravtsov¹

2017

Proceedings of the VIII International Scientific Colloquium "Modelling for Materials Processing"

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The work contains literary and own data on the history of the development of silicon growing technologies with volumetric and surface heating of the melt. The advantages and disadvantages of technologies with surface heating are discussed. Examples are given of the implementation of such processes in the 60-70s of the last century and the reasons for the termination of the relevant works. Principal solutions for the realization of the crystal growth process with electron beam heating of the melt surface realized in KEPP EU (Latvia) are described. Differences in the management of the growing process of crystals with a constant diameter in comparison with the Czochralski method are discussed. The geometric and electro-physical properties of the obtained crystals are presented. Possible application of such crystals and the immediate tasks of technology development are described.

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Section: Growing Crystals With Electron Beam Heatingmentioning

confidence: 99%

Development of Silicon Growth Techniques from a Melt with Surface Heating

Kravtsov¹

2017

Proceedings of the VIII International Scientific Colloquium "Modelling for Materials Processing"

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“…In this process, using a quartz crucible (not a skull), we obtained a rod with a diameter of 300 mm and a mass of 80 kg. Some research results were published earlier [10,11]. Silicon is heated by two cold-cathode electron-beam heaters (EBH) that use a gas mixture of hydrogen and less than 1% oxygen.…”

Section: Introductionmentioning

confidence: 99%

Reduction of impurity sources in Si crystal growth system with electron gun beam heating

Kravtsov¹,

Virbulis²,

Krauze³

2021

physics

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A new series of experiments was conducted to determine the source of impurities in the process of silicon crystal growth with electron beam heating. A gas-dynamic window was placed between the electron gun and growth chamber. Also positively-charged traps were placed along the crucible to reduce the number of electrons hitting the chamber and the crucible. Five experiments were conducted: two with the window, two with charge traps, and one with both the window and charge traps. The analysis of obtained samples showed that the gas-dynamic window decreases the content of Al, Cu, Fe, Cr and O2, and the trap, used in the experiments, decreases the content of Fe, Cr and Cu in residues of the melt. The content of all impurities, except Al, is close to the goal level. Al impurities come only from the gun, but the gas-dynamic window cannot eliminate them completely. It seems that Al impurities come either as neutral atoms carried by the gas or as positively charged ions. To reduce these impurities, a separation of the Al flow from the beam by the magnetic field is proposed.

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Ingot pulling with electron beam heating: Process enhancements

Cited by 2 publications

References 2 publications

Development of Silicon Growth Techniques from a Melt with Surface Heating

Development of Silicon Growth Techniques from a Melt with Surface Heating

Reduction of impurity sources in Si crystal growth system with electron gun beam heating

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