CW Nd:YAG laser (1.065 µm wavelength) anneal of B11 and BF2 implanted silicon yields sheet resistance values matching those of the thermally annealed ones. The samples annealed at low laser powers show a narrowing of the secondary ion mass spectroscopy (SIMS) dopant profile compared to the as implanted cases, accompanied by a shift in the profile peak towards the bulk. The anomalous dopant redistribution when annealing is done at low laser powers is explained on the basis of a new phenomenon, termed damage enhanced diffusion.
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