Anomalous Dopant Redistribution in Nd:YAG Laser Annealed Low Energy Ion Implanted Silicon

Harish, C. M.; Kumar, Vikram; Prabhakar, Anantharamaiah

doi:10.1143/jjap.31.1287

Cited by 6 publications

(3 citation statements)

References 3 publications

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“…9,13,[42][43][44][45] In some cases, pile-up has been observed in the vicinity of a surface or interface, 9,42,44 sometimes within 1 nm of the surface. Such peaks impose a severe test of secondary-ion-mass spectroscopy ͑SIMS͒.…”

Section: B Dopant Pile-upmentioning

confidence: 99%

Effect of near-surface band bending on dopant profiles in ion-implanted silicon

Jung

Braatz

Seebauer

2004

Journal of Applied Physics

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Recent experimental work has demonstrated the existence of band bending at the Si–SiO2 interface after ion implantation. The present work employs FLOOPS-based numerical simulations to investigate the effects this bending can have upon dopant profiles that evolve during transient enhanced diffusion in post-implant annealing. In the case of boron, band bending induces significant junction deepening because the near-interface electric field repels charged interstitials from the interface. Band bending also provides a mechanism to explain the pile-up of electrically active boron within ∼1 nm of the interface. The results suggest that conflicting literature regarding the capacity of the interface to absorb interstitials can be rationalized by a modest inherent absorbing capability coupled with band bending.

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Section: B Dopant Pile-upmentioning

confidence: 99%

Effect of near-surface band bending on dopant profiles in ion-implanted silicon

Jung

Braatz

Seebauer

2004

Journal of Applied Physics

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“…This damage-enhanced diffusion is toward the surface, which acts as a massive sink, because the level of damage is highest near the surface. 16,17 As a result, an uphill diffusion dominates and dose loss as well as profile narrowing is observed during the RTA. However, as the number of laser pulses increases, the damage sites near the surface are annealed and the pull of the surface sink on the dopants is reduced.…”

Section: Resultsmentioning

confidence: 99%

Boron Profile Narrowing in Laser-Processed Silicon after Rapid Thermal Anneal

Poon

Tan

Cho

et al. 2004

J. Electrochem. Soc.

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The narrowing or broadening of the boron profile during annealing of laser-processed samples is observed to occur depending on which of two competing mechanisms, uphill diffusion of boron due to a highly defective single-crystal layer near the surface or transient-enhanced diffusion due to end-of-range defects, dominates during the post-laser processing anneal. The results show that uphill diffusion of boron is found to dominate during annealing of a single-pulse laser-processed sample because the defects near the surface cannot be efficiently removed with a single laser pulse adjusted to a value that can melt the amorphous silicon but not the underlying crystalline substrate. Junctions thus become shallower with the post-laser processing anneal. However, with successive laser pulses, the dopants are observed to move deeper into the silicon with subsequent rapid thermal annealing cycles. This could be due to the reduced contribution of uphill boron diffusion when the defects near the surface decrease with successive pulses. The end-of-range defects, which cannot be sufficiently annealed because the melt depth is not beyond the amorphous layer, thus play the key role in broadening the boron concentration profile for multiple-pulse laser-annealed silicon.

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“…Matches of similar quality were obtained for other experimental data at different peak temperatures and ramp rates. that boron can exhibit apparent "uphill diffusion" behavior [28,29,30, 31, 32,331. In some cases, pile-up has been observed in the vicinity of a surface or interface [28,30,321 [34], probably caused by surface oxygen. However, Shima et al [28] employed SIMS conducted from the front and back sides of implanted specimens to conclude that the pile-up observed in their data within 0.6 nm of the surface was genuine.…”

Section: Surface Effectsmentioning

confidence: 99%

Surface control of interstitial behavior for improved ultrashallow junction formation

Seebauer

The Fourth International Workshop on Junction Technology, 2004. IWJT '04.

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There is increasing evidence that surface proximity effects must be incorporated into models for transient enhanced diffusion (TED). The present work examines the previously unrecognized influence that near-surface band bending can have on dopant profiles. Experiments employ the optical technique of photoreflectance to show that band bending exists at the Si-Si02 interface just after implantation. The effects of such band bending are investigated numerically using a simulator whose rate parameters have been developed from literature data using Maximum Likelihood (ML) estimation together with multivariate statistics to quantify accuracy. The resulting simulator yields excellent tits of SIMS profiles with no freely adjustable parameters, and shows that band bending transforms interfaces into reflectors of charged interstitials (i.e., no flux), even if the interface would otherwise serve as a good sink for these defects. This transformation deepens the junction significantly and also induces the pileup of dopant very close to the interface.

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Anomalous Dopant Redistribution in Nd:YAG Laser Annealed Low Energy Ion Implanted Silicon

Cited by 6 publications

References 3 publications

Effect of near-surface band bending on dopant profiles in ion-implanted silicon

Effect of near-surface band bending on dopant profiles in ion-implanted silicon

Boron Profile Narrowing in Laser-Processed Silicon after Rapid Thermal Anneal

Surface control of interstitial behavior for improved ultrashallow junction formation

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