The effects of 10 MeV Al4+ ions irradiation on structural, surface morphological, optical and electrical properties of fluorine-doped tin oxide (FTO) substrates are presented for solar cell applications. The ions irradiation changes the surface morphology, average roughness, interface width, roughness exponent, and several other fractal parameters of the FTO surfaces. The UV–visible transmittance measurement shows an enhancement of transmittance in the ions irradiated substrates up to 95%. The electrical properties such as mobility, work-function, sheet resistance, and resistivity are also modified due to ions irradiation. In order to have functional applications of these ions irradiated substrates, we fabricated organic solar cells on these ions irradiated and pristine FTO substrates. The device performances are significantly improved for the case of ions irradiated FTO substrate in comparison to the pristine one. Thus, better device performance due to effective changes in physical properties suggests that the ions irradiated FTO substrates can be used as better electrodes for organic and hybrid photovoltaic device applications.
In the present work, pure and fullerene (C60)-doped methylammonium lead halide (CH3NH3PbI3) perovskite thin films were fabricated on glass substrates by spin coating method at different concentrations of fullerene (C60). The structural, morphological, and optical characteristics of as-prepared thin films were further analysed using experimental and computational methods. The X-ray diffraction studies of the samples confirm that perovskite films have a tetragonal structure with a preferred orientation along the (110) plane. The surface morphology of these films suggests that the incorporation of fullerene (C60) into perovskite films increased the grain size and supports the compact and pinhole-free growth of perovskite films. Also, geometrical, electronic, and optical properties were studied by using the first-principles DFT computational method. Optical properties have been studied experimentally and verified computationally .All the perovskite thin-film samples exhibit a direct band-gap which is suitable for solar cells applications.
Here, we report the synthesis of pristine and fullerene (C60) modified zinc oxide (ZnO) films by the sol-gel method. The incorporation of C60 in pristine ZnO films modifies its structural, surface morphological, optical, and electrical properties. Structural characterization suggests that pristine and C60 modified ZnO films exhibit Wurtize crystal structure. Surface morphological characterization demonstrates that incorporation of C60 into ZnO leads to the formation of spherical nano-particles which varies on the doping of C60. The properties of C60 doped ZnO films show a reduction in the bandgap values with enhanced optical absorption and photoluminescence properties. Further, the surface potential and work function of pristine and C60 incorporated ZnO films, as investigated by Kelvin probe force microscopy (KPFM) show tuning of Fermi level in pristine and C60 modified ZnO films. Also, C60 modified ZnO Schottky diodes exhibited enhanced carrier mobility with better charge transport properties.
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