This paper reports the development of a thermal chemical vapor deposition process for pure cobalt from the source precursor cobalt tricarbonyl nitrosyl for incorporation in integrated circuit silicide applications. Studies were carried out to examine the underlying mechanisms that control Co nucleation and growth kinetics, including the effects of key process parameters on film purity, texture, morphology, and electrical properties. For this purpose, systematic variations were implemented for substrate temperature, precursor flow, hydrogen reactant flow, and deposition time (thickness). Resulting films were analyzed by Rutherford backscattering spectrometry, X-ray photoelectron spectroscopy, X-ray diffraction, fourpoint resistivity probe, scanning electron microscopy, and atomic force microscopy. These investigations identified an optimized process window for the growth of pure Co with resistivity of 9 + 2 µΩ cm, smooth surface morphology, and root-mean-square surface roughness at or below 10% of film thickness.
Key findings are presented from a systematic study aimed at establishing a fundamental understanding of precursor decomposition pathways and resulting film nucleation and growth kinetics in the chemical vapor deposition of titanium nitride from tetraiodotitanium. As part of the study, key process parameters were varied systematically in order to determine process activation energy and establish corresponding functionality curves for film purity, growth rate, structure, and morphology. The key process parameters studied were substrate temperature, source temperature, hydrogen carrier gas flow, and reactor pressure. Corresponding findings indicated that all four parameters showed a direct and significant effect on film quality. Additionally, a thorough evaluation of resulting film composition, texture, and electrical properties led to the identification of a wide process window f or the growth of TiN films with optimized characteristics and performance. In this process window, the TiN films were nitrogen-rich, with iodine concentrations below 2 atom %, displayed resistivitias in the range 100 to 150 p.11 cm, depending on thickness, and exhibited excellent step coverage, better than 90% conformality in both nominal 0.45 p.m, 3:1 aspect ratio and 0.25 tim, 4:1 aspect ratio contact structures.
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