No abstract

The development of highly stable and efficient wide-bandgap (WBG) perovskite solar cells (PSCs) based on bromine-iodine (Br–I) mixed-halide perovskite (with Br greater than 20%) is critical to create tandem solar cells. However, issues with Br–I phase segregation under solar cell operational conditions (such as light and heat) limit the device voltage and operational stability. This challenge is often exacerbated by the ready defect formation associated with the rapid crystallization of Br-rich perovskite chemistry with antisolvent processes. We combined the rapid Br crystallization with a gentle gas-quench method to prepare highly textured columnar 1.75–electron volt Br–I mixed WBG perovskite films with reduced defect density. With this approach, we obtained 1.75–electron volt WBG PSCs with greater than 20% power conversion efficiency, approximately 1.33-volt open-circuit voltage ( V oc ), and excellent operational stability (less than 5% degradation over 1100 hours of operation under 1.2 sun at 65°C). When further integrated with 1.25–electron volt narrow-bandgap PSC, we obtained a 27.1% efficient, all-perovskite, two-terminal tandem device with a high V oc of 2.2 volts.

We report on the improved operational stability of unencapsulated perovskite solar cells (PSCs) aged in an ambient atmosphere at elevated temperatures (70 °C) for >1000 h under constant illumination and bias at 30− 50% relative humidity. We identify a previously unseen interfacial degradation mechanism concerning the use of a MoO x interlayer, which was originally added to increase operational stability. Specifically, the hole-transport layer/MoO x interface buckles under illumination at 70 °C, which leads to delamination and rapid losses of short-circuit current density corresponding to an average t 80 of ∼55 h. By judiciously evaluating various hole-transport layers, interlayers, and contacts, we find that replacing the MoO x with a VO x interlayer, regardless of the other components in the solar cell, alleviates this buckling issue due to its higher activation barrier toward crystallization, leading to significant gains in PSC operational stability. Unencapsulated devices aged in an ambient atmosphere with a VO x interlayer retain 71% of their initial PCE on average after constant illumination and bias at 70 °C for 1100 h (t 80 ∼ 645 h). Currently, this is the highest temperature reported for the operational stability of unencapsulated n-i-p PSCs aged in air. Identification of a new facet of the complex degradation mechanisms in PSCs will allow for targeted acceleration testing to speed the deployment of low-cost, long-lasting electricity generation under realistic operating temperatures.

Description and characterization of the packages, detailed packaging procedure, best practices guidelines, and guide for mounting the samples outdoors (PDF)

Metal halide perovskite photovoltaic performance required for commercial technology encompasses both efficiency and stability. Advances in both these parameters have recently been reported; however, these strategies are often difficult to directly compare due to differences in perovskite composition, device architecture, fabrication methods, and accelerated stressors applied in stability tests. In particular, it is found that there is a distinct lack of elevated temperature, operational (light and bias) stability data. Furthermore, significant testing is required to understand the interactions when combinations are used (e.g., additives used with posttreatments). Herein, individual and combined additive, posttreatment, and contact layer strategies from recent literature reports under standardized operational stability tests of p–i–n CsMAFA perovskites at 70 °C are evaluated. Through analysis of over 1000 devices, it is concluded that the hole‐transport layer (HTL) is the most significant component impacting elevated temperature operational stability. This analysis motivates future development of high‐performance HTLs.