Abstract-To represent 3-D space in detail, it is necessary to acquire 3-D shapes and textures simultaneously and efficiently through the use of precise trajectories of sensors. However, there is no reliable, quick, cheap, and handy method for acquiring accurate high-resolution 3-D data on objects in outdoor and moving environments. In this paper, we propose a combination of charge-coupled device cameras, a small and inexpensive laser scanner, an inexpensive inertial measurement unit, and Global Positioning System for a UAV-borne 3-D mapping system. Direct georeferencing is achieved automatically using all of the sensors without any ground control points. A new method of direct georeferencing by the combination of bundle block adjustment and Kalman filtering is proposed. This allows objects to be rendered richly in shape and detailed texture automatically via a UAV from low altitude. This mapping system has been experimentally used in recovery efforts after natural disasters such as landslides, as well as in applications such as river monitoring.
We investigate the reliability issues associated with the application of CMOS devices contained within an advanced SiGe HBT BiC-MOS technology to emerging cryogenic space electronics (e.g., down to 43 K, for Lunar missions). Reduced temperature operation improves CMOS device performance (e.g., transconductance, carrier mobility, subthreshold swing, and output current drive), as expected. However, operation at cryogenic temperatures also causes serious device reliability concerns, since it aggravates hot-carrier effects, effectively decreasing the inferred device lifetime significantly, especially at short gate lengths. In the paper, hot-carrier effects are demonstrated to be a stronger function of the device gate length than the temperature, suggesting that significant trade-offs between the gate length and the operational temperature must be made in order to ensure safe and reliable operation over typical projected mission lifetimes in these hostile environments.
A lead zirconate titanate (PZT;Pb(Zr0.52Ti0.48)O3) layer embedded infrared (IR) detector decorated with wavelength-selective plasmonic crystals has been investigated for high-performance non-dispersive infrared (NDIR) spectroscopy. A plasmonic IR detector with an enhanced IR absorption band has been designed based on numerical simulations, fabricated by conventional microfabrication techniques, and characterized with a broadly tunable quantum cascade laser. The enhanced responsivity of the plasmonic IR detector at specific wavelength band has improved the performance of NDIR spectroscopy and pushed the limit of detection (LOD) by an order of magnitude. In this paper, a 13-fold enhancement in the LOD of a methane gas sensing using NDIR spectroscopy is demonstrated with the plasmonic IR detector.
The low temperature electrical properties of modulation-doped two dimensional electron gases (2DEGs) in the SiGe system were studied. The effects on the electrical properties of removing the substrate from the growth chamber after the growth of the virtual substrate, chemically cleaning the virtual substrate, and then growing the modulation-doped structure on a thin SiGe buffer were investigated. The results demonstrate that the carrier density and mobility decrease as the regrowth interface is moved closer to the 2DEG. The uniformity of the regrown wafers was also investigated. A monotonic increase in carrier density and a decrease in mobility were observed towards the edge of the wafers. Appropriate mechanisms will be discussed.
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