This paper reviews the work carried out by the authors over the last three years on the deposition of tin sulphide films. Particular emphasis is placed on the design and limitations of single-source precursors for these films. Simple homoleptic thiolates Sn(SR) 4 only generate tin sulphides in combination with H 2 S, otherwise Sn 3 0 4 is produced by in situ formation of Sn(0) and subsequent oxidation. This problem is overcome by the use of chelating dithiolates. The decomposition of mixed ligand (RS) 2 Sn(S2CNEt2)2 are also described, as are the synthesis and structures of mixed metal thiolates (Ph 3 PP)AuSSnCy 3 and PhHgSSnCy 3 , potential precursors for ternary tin-containing sulphides.
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