Multicrystalline silicon is widely used in the photovoltaic industry. A key point is to increase the ingot quality during the growth process to increase the solar cells efficiency. Numerical calculations were performed to investigate the melt convection and interface shape in a pilot furnace for unidirectional solidification of multicrystalline silicon. It was found that growth parameters like temperature gradients and growth rate strongly influence the melt flow and interface shape. The results indicate that both interface deflection and melt flow structure are sensitive to the variation of considered growth parameters. The regularity of the melt flow pattern increases with the increase of temperature gradient in the melt and growth rate.
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