“…The presence of carbon and nitrogen in the silicon melt during the directional solidification process, can lead to the formation of SiC and Si 3 N 4 precipitates [4,5,6,7,8,9] which can determine the appearance of dislocations and cracks during the wafer sawing of the ingot. In order to improve the impurity segregation and to obtain a uniform distribution of impurities in the melt, different techniques were proposed to control the melt flow in a directional solidification configuration: use of travelling magnetic fields [10,11], use of a combination of vertical magnetic field and electrical current [12] or a mechanical stirring [13]. Besides the beneficial influence on the impurity distribution, one should also take into account the influence of the forced convection on the solid-liquid interface and on the crucible dissolution.…”